Download DSS2x61-0045A

DSS2x61-0045A
V RRM =
45 V
I FAV = 2x 60 A
V F = 0.65 V
Schottky Diode
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSS2x61-0045A
Backside: isolated
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Housing: SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
Symbol
Definition
Conditions
VRRM
max. repetitive reverse voltage
IR
reverse current
Ratings
VF
forward voltage
min.
typ.
45 V
2
mA
VR =
45 V
TVJ = 125 °C
10
mA
IF =
60 A
TVJ = 25 °C
0.75
V
0.94
V
0.65
V
0.85
V
TC = 110°C
60
A
TVJ = 150°C
0.43
V
TVJ = 125 °C
60 A
I F = 120 A
average forward current
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
T VJ
virtual junction temperature
V
VR =
IF =
I FAV
45
TVJ = 25 °C
TVJ = 25 °C
I F = 120 A
VF0
Unit
max.
rectangular
d = 0.5
for power loss calculation only
-40
3.2
mΩ
0.80
K/W
150
°C
Ptot
total power dissipation
TC = 25 °C
150
W
I FSM
max. forward surge current
t = 10 ms (50 Hz), sine
TVJ = 45°C
800
A
CJ
junction capacitance
VR =
TVJ = 25 °C
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
5 V; f = 1 MHz
Data according to IEC 60747and per diode unless otherwise specified
2.93
nF
20110603a
DSS2x61-0045A
Ratings
Symbol
Definition
Conditions
I RMS
RMS current
per terminal
R thCH
thermal resistance case to heatsink
Tstg
storage temperature
min.
typ.
max.
Unit
100
0.10
-40
Weight
A
K/W
150
30
°C
g
MD
mounting torque
1.1
1.5
Nm
MT
terminal torque
1.1
1.5
Nm
V ISOL
isolation voltage
d Spp/App
creepage | striking distance on surface | through air
terminal to terminal
d Spb/Apb
creepage | striking distance on surface | through air
terminal to backside
t = 1 second
3000
t = 1 minute
V
2500
V
10.5
3.2
mm
8.6
6.8
mm
Product Marking
abcde
Logo
YYWW Z
Part No.
XXXXXX
Assembly Code
DateCode
Assembly Line
Ordering
Standard
Part Name
DSS2x61-0045A
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Marking on Product
DSS2x61-0045A
Delivering Mode
Tube
Base Qty Code Key
10
470449
Data according to IEC 60747and per diode unless otherwise specified
20110603a
DSS2x61-0045A
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110603a
DSS2x61-0045A
100
10000
100
10
IF
TVJ=150°C
1 125°C
IR
10
CT
1000
100°C
[A]
[pF]
[mA] 0.1
75°C
TVJ =
150°C
125°C
25°C
0.01 50°C
25°C
TVJ = 25°C
1
0.0
100
0.001
0.2
0.4
0.6
0.8
1.0
0
10
20
Fig. 1 Maximum forward voltage
drop characteristics
30
40
50
0
10
20
30
40
VR [V]
VR [V]
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
VF [V]
80
120
70
100
60
80
50
IF(AV)
P(AV)
60
d = 0.5
[A]
d=
DC
0.5
0.33
0.25
0.17
0.08
40
DC
[W] 30
40
20
20
10
0
0
0
40
80
120
0
160
20
40
60
80
TC [°C]
IF(AV) [A]
Fig. 4 Average forward current
IF(AV) vs. case temp. TC
Fig. 5 Forward power loss
characteristics
100
1
D=0.5
ZthJC
0.33
0.25
[K/W]
0.17
0.08
0.1
Single Pulse
(Thermal Resistance)
0.05
0.001
Note: All curves are per diode
DSS2x061-0045A
0.01
0.1
1
10
t [s]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110603a