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MINIPROJECT
EMT 471 - SEMICONDUCTOR PHYSICS
PTOJECT 1
Si Bipolar Junction Transistor (BJT)
GROUP
1
DESCRIPTION
The bipolar transistors used in ICs have high mobility of minority
carriers in the base region results in high-speed performance. The
size of bipolar transistors is also having been reduced to meet high
density requirement. The performance of high frequency bipolar
transistors has been greatly improved in the last decade or so. The
collector is generally improved with a selective implanted collector or
by modification the doping profile in the epi-layer. In this project,
students will generate a structure of a conventional Si BJT and do
some modification in order to optimize the device performances.
PROJECT 2
Light-Emitting Diode (LED)
GROUP
2
DESCRIPTION
Light-emitting diodes (LEDs) are p-n junctions that can emit
spontaneous radiation in ultraviolet, visible, or infrared regions. To
be realistic, LEDs are complex semiconductors that convert an
electrical current into light. The conversion process is fairly efficient
in that it generates little heat compared to incandescent light. LEDs
are also of interest for fiber optics because of its inherent
characteristics. In this project, students are exposed to the
development of InGaAsP LED used for optical fiber communication.
PROJECT 3
Metal-Semiconductor Field Effect Transistor (MESFET)
GROUP
3
DESCRIPTION
Recent advances in GaAs processing techniques in conjunction with
new fabrication and circuit approaches have made possible the
development of ‘silicon-like’ GaAs IC technology. However, the short
minority-carrier lifetime and the lack of high quality insulating films
have delayed MOS technology using GaAs. Thus, the emphasis of
GaAs is in the MESFET area in which our main concerns are the
majority carriers transport and the metal-semiconductor contact. In
this project students are exposed to the development of a MESFET
device
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PROJECT 4
Silicon Solar Cell
GROUP
4
DESCRIPTION
Solar cell is important for an alternative terrestrial energy source
because it can convert sunlight directly to electricity with good
conversion efficiency, can provide nearly permanent power at low
operating cost and is virtually nonpolluting. A solar cell, or
photovoltaic cell, is a semiconductor device consisting of a large-area
p-n junction diode, which, in the presence of sunlight is capable of
generating usable electrical energy. This conversion is called the
photovoltaic effect. The field of research related to solar cells is
known as photovoltaic. In this project, students need to generate a
silicon solar cell structure and do some analyzation
PROJECT 5
Thin Film Transistor (TFT)
GROUP
5
DESCRIPTION
The thin film transistor (TFT) is an important device in electronic
application that require a large area such as liquid crystal displays
(LCD) and contact imaging sensors (CIS). Hydrogenated amorphous
silicon (a-Si:H) and polysilicon are the two most popular materials
for thin film transistors (TFT) fabrication. Since the deposition
temperature of a-Si:H is low(typically 200C – 400C), inexpensive
substrate such as glass is used. The role played by the hydrogen
atoms contained in the a-Si:H is to passivate dangling bonds in the
amorphous silicon matrix and thus reduce the defect density. In this
project, students are exposed to the TFT generation and electrical
characterization
PROJECT 6
Silicon Photodiode
GROUP
6
DESCRIPTION
Silicon photodiodes are semiconductor light sensors that generate a
current or voltage when P-N junction in the semiconductor is
illuminated by light. These devices feature excellent linearity with
respect to incident light, have low internal noise, wide spectral
response, are mechanically rugged, compact and lightweight with
long life. In this project, students have to build a Silicon Photodiode
structure.
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PROJECT 7
LED on SOI (Silicon on Insulator) Substrate
GROUP
7
DESCRIPTION
Light-emitting diodes (LEDs) are p-n junctions that can emit
spontaneous radiation in ultraviolet, visible, or infrared regions. To
be realistic, LEDs are complex semiconductors that convert an
electrical current into light. The conversion process is fairly efficient
in that it generates little heat compared to incandescent light. LEDs
are also of interest for fiber optics because of its inherent
characteristics. In this project, students are exposed to the
development of LED on SOI substrate used for optical fiber
communication.
PROJECT 8
Emitter Controlled Thyristor (ECT)
GROUP
8
DESCRIPTION
The Emitter Controlled Thyristor (ECT) is a new MOS gate controlled
thyristor which exhibits superior on-state characteristic even at high
voltage ratings and excellent current saturation capability. The ECT
represents a new concept to realize the control of thyristor, which is
different from the MCT and EST. There are two major requirements
in an ECT. An ECT must have an emitter switch in series with the
thyristor, and an emitter-short switch in parallel with the emitter
junction of the thyristor. Therefore two MOSFETs are needed. First,
an emitter FET is needed to connect in series with the emitter of the
thyristor. Second, another FET is needed to short the emitter to the
cathode during turn-off. This latter switch is the so-called emittershort switch. In some cases, a turn-on FET is needed to trigger the
thyristor into the latching condition. Therefore in this project,
students need to build the structure needed to realize the ECT.
PROJECT 9
DMOS Power Transistor
GROUP
9
DESCRIPTION
The double-diffused MOS (DMOS) power transistor has a gate at the
surface and serves as a mask for the subsequent double-diffusion
process. The double-diffusion process is used to form the p-base and
n+ source portions. The advantages of D-MOSFET are its short drift
time across the p-base region and the avoidance of high-field corners.
In this project, students have to build a DMOS device structure.
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PROJECT 10
High Electron Mobility Transistor (HEMT)
GROUP
10
DESCRIPTION
Semiconductor layer doped with n-type impurities in which to
generate electron in the layer is actually causes the electron to slow
down because they end up colliding with the impurities residing in
the same region. HEMT is a smart device which is designed to
resolve the contradiction. HEMT accomplishes this by use high
mobility electrons generated using the heterojunction by the highly
doped n-type AlGaAs thin layer and a non-doped GaAs layer. HEMT
is widely used as an extremely low noise device in terrestrial and
space telecommunication systems, radio telescopes in the area of
astronomy, direct broadcasting satellite television receivers and car
navigation receivers. Students need to generate an HEMT structure
and do device analyzation
PROJECT 11
N-channel MOSFET
GROUP
11
DESCRIPTION
Short for Negative-channel MOSFET, a type of semiconductor that is
negatively charges so that transistors are turned on or off by the
movement of electrons. NMOSFET is faster than PMOSFET, but also
more expensive to produce. The N-channel MOSFET consists of a ptype semiconductor substrate in which two n+ regions, the source
and drain are formed. The metal plate on the oxide is called the gate.
In this work, students are exposed to the development of the Nchannel MOSFET processes until it can be characterized electrically
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