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Synthesis, Structural and Optical Characterization of NanoCrystalline ZnO thin film deposited by Sol-Gel method
Amanpal Singh, Shivani Koul, Anuj Kumar, Mukesh Kumar,
and Dinesh Kumar
Electronic Science Department, Kurkshetra University, Kurukshetra (Haryana)-136119
Abstract
Zinc oxide is a versatile II-VI compound semiconductor material has
gained detailed attention in few times due to its wide applications and superior
physical-chemical properties making Zinc Oxide as a basis of Nano- world. ZnO
Nanostructures, such as nanowires and nanorods are widely being used in
sensing, electroluminiscence devices. Transparent, nano-crystalline and crack
free film was deposited on corning glass and silicon substrate by sol-gel
technique. A transparent sol of 0.33mol/l is prepared by dissolving Zinc acetate
dihydrate in 2-methoxyethanol using mono-ethanolamine (MEA) as sol stabilizer.
The results show that deposited film is obtained in nano range. 1ml water in 30
ml of in 2-methoxyethanol makes easy to dissolve Zinc acetate dehydrate and
increase the stability of sol at higher concentration.
The film is annealed in oxygen environment at 500ºC for one hour and
characterized by X-ray diffraction, Atomic force microscopy and UV-VIS
absorption spectroscopy. Raman measurement of the film is also done. X-ray
dominated sharp peak at 34.44° (2θ ) angle and relatively higher peak than other
observed peaks showing extremely preferred crystal growth along (002) i.e; the
highly wurtzite crystallinty in sample. Grain size of sample was observed by XRD
and AFM and was found near to 40 nm. UV-Study shows sharp ultraviolet
absorption edges at approximately 375 nm wavelength. The optical band gap
energy Eg was 3.3 eV for thin film. Thin film was characterized with Raman
spectroscopy excited by laser light of 514 nm wavelength. The sharp spectral
peaks from all Raman active phonon modes have been distinctly observed. Red
shift of longitudinal-optical phonon scattering peaks is observed in thin film
compared to bulk sample.