* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download meepe 102 advanced power semiconductor devices
Ground (electricity) wikipedia , lookup
Pulse-width modulation wikipedia , lookup
Power inverter wikipedia , lookup
Variable-frequency drive wikipedia , lookup
Voltage optimisation wikipedia , lookup
Power factor wikipedia , lookup
Opto-isolator wikipedia , lookup
Standby power wikipedia , lookup
Thermal runaway wikipedia , lookup
Wireless power transfer wikipedia , lookup
Power over Ethernet wikipedia , lookup
Electrical substation wikipedia , lookup
History of electric power transmission wikipedia , lookup
Audio power wikipedia , lookup
Amtrak's 25 Hz traction power system wikipedia , lookup
Semiconductor device wikipedia , lookup
Mains electricity wikipedia , lookup
Electrification wikipedia , lookup
Electric power system wikipedia , lookup
Power electronics wikipedia , lookup
Alternating current wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Buck converter wikipedia , lookup
M.TECH DEGREE EXAMINATION First Semester Model Question Paper - II Branch: Electrical and Electronics Engineering Specialization: Power Electronics MEEPE 102 ADVANCED POWER SEMICONDUCTOR DEVICES Time: Three hours (2013 Admissions) (Answer all Questions) Max. Marks: 100 1(a)Explain the term Safe Operating Area associated with power devices. (5) (b)Explain the forward and reverse characteristics of a Power diode. (5) (c)Draw and explain the reverse recovery characteristics of a Power diode.Also derive the expressions for reverse recovery time and peak inverse current. (15) OR 2 (a)Explain the construction and principle of operation of a Schottky diode. (10) (b) Explain the EMI phenomenon due to switching.What are the different methods to reduce it. (15 ) 3(a)Explain the phenomenon of secondary breakdown in transistors. (5) (b)What are the advantages and disadvantages of Power Darlingtons. (5) (c) The various parameters of a transistor circuit areVCC=220V,VCE(sat)=2V,ICS=80A,td=0.4µs,tr=1µs,tn=50 µs, ts=3µs,tf=2µs,to=40µs and fs=5kHz.Thecollector-to-emitter leakage current is ICEO=2mA. Determine the power loss due to collector current (a) during ton = td + tr , (b)during conduction period tn, (c) during turn off toff = ts + tf , (d) during off time to and (e) total average power losses PT , (f) Plot the instantaneous power due to collector current Pc(t). (15) OR 4 (a)Explain the Two-transistor model of Thyristor (10) (b)Explain the gate and switching characteristics of an SCR (10) (c)Compare BJT and Thyristor (5) 5 (a)Explain the construction of a power MOSFET (10) (b)Draw and explain the static and switching characteristics of power MOSFET (10) (c) Explain the basic structure of an MCT (5) OR 6 (a)Explain the basic structure of an IGBT (10) (b)Draw and explain the static and switching characteristics of IGBT (10) (c)Explain the basic principle of operation of a GTO (5) 7 (a)Explain the overvoltage,overcurrent and gate protection schemes for thyristors. (20) (b)A thyristor is controlling the power in a load resistance connected in series.The supply voltage is 240V dc and the specified limits for di/dt and dv/dt for the SCR are 50A/µs and 300V/µs respectively. Determine the values of the di/dt inductance and the snubber circuit parameters Rs and Cs. (5) OR 8 (a) Explain the electrical analogy of thermal components in an SCR (10) (b) Discuss the thermal equivalent circuit in transient heat transfer and the transient thermal impedance. (15)