Thermal Expansion Coefficient of Polycrystalline
... A novel imaging technique for the measurement of thermally induced curvature of microcantilevers was developed.17 The schematic of the setup is shown in Fig. 4. The apparatus consists of a tungsten–halogen lamp for heating, collimated light source for illumination, and chargecoupled device 共CCD兲 cam ...
... A novel imaging technique for the measurement of thermally induced curvature of microcantilevers was developed.17 The schematic of the setup is shown in Fig. 4. The apparatus consists of a tungsten–halogen lamp for heating, collimated light source for illumination, and chargecoupled device 共CCD兲 cam ...
Post Print Electronic structure and chemical bonding in Ti2AlC
... Nanolaminated ternary carbides and nitrides, also referred to as MAX phases, denoted M n+1AXn, where n = 1, 2, and 3 represents 211, 312, and 413 crystal structures, respectively, have recently been the subject of intense research.1–3 M denotes an early transition metal, A is a p element, usually be ...
... Nanolaminated ternary carbides and nitrides, also referred to as MAX phases, denoted M n+1AXn, where n = 1, 2, and 3 represents 211, 312, and 413 crystal structures, respectively, have recently been the subject of intense research.1–3 M denotes an early transition metal, A is a p element, usually be ...
L6-Imperfections
... directions for which dislocation movement is easier – these are called the slip planes and slip directions Slip displacements are tiny – however, if a large number of dislocations traverse a crystal, moving on many planes, the material deforms at a macroscopic level ...
... directions for which dislocation movement is easier – these are called the slip planes and slip directions Slip displacements are tiny – however, if a large number of dislocations traverse a crystal, moving on many planes, the material deforms at a macroscopic level ...
Complete list of Abstracts - MSU Department of Physics and
... and when limited, can result in drastically altered behavior. Dimensional limiting can be imposed by control of particle growth, as when extended solids are made as nanometer sized particles, or can arise spontaneously as a structural motif in an extended solid, such as the presence of 1-D chains or ...
... and when limited, can result in drastically altered behavior. Dimensional limiting can be imposed by control of particle growth, as when extended solids are made as nanometer sized particles, or can arise spontaneously as a structural motif in an extended solid, such as the presence of 1-D chains or ...
Energy dependence of the effective mass in the envelope
... in which the effective-mass approximation is claimed to produce good results, provided that suitable values are chosen. Notably, transmission through a single barrier of AlAs 1.42 nm thick, placed between two GaAs layers [2], which can be regarded as very narrow since the AlAs lattice constant is 0. ...
... in which the effective-mass approximation is claimed to produce good results, provided that suitable values are chosen. Notably, transmission through a single barrier of AlAs 1.42 nm thick, placed between two GaAs layers [2], which can be regarded as very narrow since the AlAs lattice constant is 0. ...
CaF Lenses 2
... nm. Enter CaF2, identified as a possible savior to 157 nm technology. However, the difficulties that come with crystalline materials caused concern that the industry would not be able to get the quantity or quality it needed. But engineers persevered, producing generations of CaF2 and overcoming var ...
... nm. Enter CaF2, identified as a possible savior to 157 nm technology. However, the difficulties that come with crystalline materials caused concern that the industry would not be able to get the quantity or quality it needed. But engineers persevered, producing generations of CaF2 and overcoming var ...
KJM-MENA 3120 Structure and properties of functional materials
... Note that Table 2 is useful for assessing the lowest likely coordination number, but the CN can be higher than calculated since expanded interstices/holes are acceptable because the cation and anion is then in direct contact. Example: an oxide with Rcation/Ranion = 0.45 ought to have octahedral cati ...
... Note that Table 2 is useful for assessing the lowest likely coordination number, but the CN can be higher than calculated since expanded interstices/holes are acceptable because the cation and anion is then in direct contact. Example: an oxide with Rcation/Ranion = 0.45 ought to have octahedral cati ...
Brief overview of electrochemical potential in lithium ion batteries
... electrode materials, the Fermi energy level depends on the material’s work function. At the cathodes, the charge–discharge’s reversibility is realized by applying the transition metals to the Li(de)intercalating materials, which enables itself to be stable within a wide range of Li concentration. Th ...
... electrode materials, the Fermi energy level depends on the material’s work function. At the cathodes, the charge–discharge’s reversibility is realized by applying the transition metals to the Li(de)intercalating materials, which enables itself to be stable within a wide range of Li concentration. Th ...
Chapter #3 -- The Structure of Crystalline Solids
... structures, they do not have to be parallel. Equivalent planes must be translated to the correct atomic positions in order to maintain the proper crystal symmetry. • Families of directions are equivalent in absolute magnitude. • (222) planes are parallel to the (111) planes but not equal. • Intercep ...
... structures, they do not have to be parallel. Equivalent planes must be translated to the correct atomic positions in order to maintain the proper crystal symmetry. • Families of directions are equivalent in absolute magnitude. • (222) planes are parallel to the (111) planes but not equal. • Intercep ...
Computational Chemistry Methods for Nanoporous Materials
... Methods of evaluating energy in these systems can use complex quantum mechanical descriptions including Hartree− Fock, post-Hartree−Fock, and the ubiquitous density functional theory (DFT). These highly accurate methods can elucidate structural and mechanical properties resulting from electronic pro ...
... Methods of evaluating energy in these systems can use complex quantum mechanical descriptions including Hartree− Fock, post-Hartree−Fock, and the ubiquitous density functional theory (DFT). These highly accurate methods can elucidate structural and mechanical properties resulting from electronic pro ...
Chalcogenide glass microphotonics: Stepping into the spotlight
... deformation such as bending, twisting, and even stretching. Setting aside mechanical properties, ChGs exhibit a number of features that outclass rival materials when it comes to photonic integration on flexible substrates. First of all, unlike crystalline materials that typically require epitaxial g ...
... deformation such as bending, twisting, and even stretching. Setting aside mechanical properties, ChGs exhibit a number of features that outclass rival materials when it comes to photonic integration on flexible substrates. First of all, unlike crystalline materials that typically require epitaxial g ...
IOSR Journal of Applied Physics (IOSR-JAP)
... c=5.51Å. Fourier transform infrared (FTIR) were recorded to confirm the functional groups. These results indicate that grown crystals have two amide functional group and one carbonyl group. UV visual transmittance studies show that the grown crystals have optical transparency over the entire visible ...
... c=5.51Å. Fourier transform infrared (FTIR) were recorded to confirm the functional groups. These results indicate that grown crystals have two amide functional group and one carbonyl group. UV visual transmittance studies show that the grown crystals have optical transparency over the entire visible ...
Diamond-like Carbon Thin Film with Controlled Zeta
... If the absorption is purely nonlinear, the laser intensity required to induce a permanent change will depend nonlinearly on the bandgap of the substrate material. Because the bandgap energy varies from material to material, the nonlinear absorption would vary a lot. However, the threshold intensity ...
... If the absorption is purely nonlinear, the laser intensity required to induce a permanent change will depend nonlinearly on the bandgap of the substrate material. Because the bandgap energy varies from material to material, the nonlinear absorption would vary a lot. However, the threshold intensity ...
Journal of Materials for optical and electronic devices www.rsc.org/MaterialsC
... sufficiently reduced by cooling the detector element to cryogenic temperatures (<120 K).3 Cryogenic refrigeration is particularly challenging for many of the important portable, airborne, and space-based detector systems. Liquid cryogens are usually impractical on long-duration and weight-constrained ...
... sufficiently reduced by cooling the detector element to cryogenic temperatures (<120 K).3 Cryogenic refrigeration is particularly challenging for many of the important portable, airborne, and space-based detector systems. Liquid cryogens are usually impractical on long-duration and weight-constrained ...
Dithiolodithiole as a Building Block for Conjugated Materials** Conjugated Materials
... Compound 6 would be expected to have similar E1/2 values as other C4S4 compounds if oxidation occurred at the sulfur atom but very different E1/2 values if oxidation occurs at the psystem given the disparate nature of the conjugated systems. The X-ray crystal structures of compounds 1 and 12 are sho ...
... Compound 6 would be expected to have similar E1/2 values as other C4S4 compounds if oxidation occurred at the sulfur atom but very different E1/2 values if oxidation occurs at the psystem given the disparate nature of the conjugated systems. The X-ray crystal structures of compounds 1 and 12 are sho ...
Principle of ductile regime machining
... Yoshikawa [4] classified the stress field into four domains as shown in Fig 1. Domain I — material removal takes place not only by mechanical action but also by chemical/temperature effects. Only a very small quantity of material is removed. 2. Domain II — here no dislocation is present and the mat ...
... Yoshikawa [4] classified the stress field into four domains as shown in Fig 1. Domain I — material removal takes place not only by mechanical action but also by chemical/temperature effects. Only a very small quantity of material is removed. 2. Domain II — here no dislocation is present and the mat ...
Surface Interactions and Microstructural Characterization of API
... thermograms show consistent melting points for crystalline materials and glass transition and crystallization events for amorphous materials. DSC measurements of un-milled, milled and quench melt NDP samples presented the consistent melting point peak. The melt quench sample also show the glass tran ...
... thermograms show consistent melting points for crystalline materials and glass transition and crystallization events for amorphous materials. DSC measurements of un-milled, milled and quench melt NDP samples presented the consistent melting point peak. The melt quench sample also show the glass tran ...
The Photographic Latent Image From an old Kodak web page As
... Because a grain is completely exposed by the passage of an energetic electron, all x-ray exposures are, as far as the individual grain is concerned, extremely short. The actual time that an x-ray-induced electron is within a grain depends on the electron velocity, the grain dimensions, and the "squa ...
... Because a grain is completely exposed by the passage of an energetic electron, all x-ray exposures are, as far as the individual grain is concerned, extremely short. The actual time that an x-ray-induced electron is within a grain depends on the electron velocity, the grain dimensions, and the "squa ...
Sodium thiourea bromide
... organic single crystals have made scientists to adopt alternate strategies. The obvious one was to develop hybrid organic-inorganic materials with some trade off in their respective advantages. This new class of materials has come to be known as semi-organic [1-3] with metal-organic coordination com ...
... organic single crystals have made scientists to adopt alternate strategies. The obvious one was to develop hybrid organic-inorganic materials with some trade off in their respective advantages. This new class of materials has come to be known as semi-organic [1-3] with metal-organic coordination com ...
PIN Photodiode for High-Energy Gamma
... in the basic structure of the CsI(Tl) and Si sensor. To evaluate factors affecting light collection efficiency, a simulation using DETECT-97 Code was performed. As a result of calculating electron-hole pairs generated in the Si sensor, the large area CsI(Tl) crystal for high-energy gamma rays was ca ...
... in the basic structure of the CsI(Tl) and Si sensor. To evaluate factors affecting light collection efficiency, a simulation using DETECT-97 Code was performed. As a result of calculating electron-hole pairs generated in the Si sensor, the large area CsI(Tl) crystal for high-energy gamma rays was ca ...
The presence of different oxidation states of cations in optical hosts
... fluency of 1017 el/cm2 (d). All these treatments were performed for different samples of the same thickness and Co concentration. As one can see three main features one can distinguish: strong additional absorption in the range of the FAE, negative additional absorption (bleaching) in the range of 4 T ...
... fluency of 1017 el/cm2 (d). All these treatments were performed for different samples of the same thickness and Co concentration. As one can see three main features one can distinguish: strong additional absorption in the range of the FAE, negative additional absorption (bleaching) in the range of 4 T ...
Introduction to Materials
... near the interfaces will affect the atomic and electronic structure of the interface and will therefore affect the material’s properties. Thus, mastering the particular physical properties of an application imposes a constraint on the technological quality of the development of these systems on the ...
... near the interfaces will affect the atomic and electronic structure of the interface and will therefore affect the material’s properties. Thus, mastering the particular physical properties of an application imposes a constraint on the technological quality of the development of these systems on the ...
Second Harmonic Generation in Solid-State Materials
... promoted to the conduction band where they are then able to move. The difference between the two is that semiconductors have much smaller band gaps than insulators. For metals, the Fermi energy level lies within a conduction band, and thus electrons can much more easily move. During SHG in a semicon ...
... promoted to the conduction band where they are then able to move. The difference between the two is that semiconductors have much smaller band gaps than insulators. For metals, the Fermi energy level lies within a conduction band, and thus electrons can much more easily move. During SHG in a semicon ...
Direct Growth of Highly Oriented Arrays of Crystalline Rutile SnO2
... general, and their large scale manufacturing at low cost in particular, remain crucial challenges to unfold the very promising future of nanotechnology. In addition to economical manufacturing of nanomaterials, a better fundamental knowledge of their electronic structure, physical, interfacial and s ...
... general, and their large scale manufacturing at low cost in particular, remain crucial challenges to unfold the very promising future of nanotechnology. In addition to economical manufacturing of nanomaterials, a better fundamental knowledge of their electronic structure, physical, interfacial and s ...
07_chapter 2
... strengths of materials, but it does sort them in a general way, so it is very useful for “quality control”; for the development of new materials; and for developing prototypes of devices and processes. Furthermore, mechanical hardness is closely related to chemical hardness, which is a measure of ch ...
... strengths of materials, but it does sort them in a general way, so it is very useful for “quality control”; for the development of new materials; and for developing prototypes of devices and processes. Furthermore, mechanical hardness is closely related to chemical hardness, which is a measure of ch ...
Semiconductor
A semiconductor material has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Semiconductors are the foundation of modern electronics. Semiconducting materials exist in two types - elemental materials and compound materials. The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of electrons and holes in a crystal lattice. The unique arrangement of the crystal lattice makes silicon and germanium the most commonly used elements in the preparation of semiconducting materials. An increased knowledge of semiconductor materials and fabrication processes has made possible continuing increases in the complexity and speed of microprocessors and memory devices. Some of the information on this page may be outdated within a year because new discoveries are made in the field frequently.The electrical conductivity of a semiconductor material increases with increasing temperature, which is behaviour opposite to that of a metal. Semiconductor devices can display a range of useful properties such as passing current more easily in one direction than the other, showing variable resistance, and sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by controlled addition of impurities, or by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion.Current conduction in a semiconductor occurs through the movement of free electrons and ""holes"", collectively known as charge carriers. Adding impurity atoms to a semiconducting material, known as ""doping"", greatly increases the number of charge carriers within it. When a doped semiconductor contains mostly free holes it is called ""p-type"", and when it contains mostly free electrons it is known as ""n-type"". The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behaviour.Some of the properties of semiconductor materials were observed throughout the mid 19th and first decades of the 20th century. Development of quantum physics in turn allowed the development of the transistor in 1947. Although some pure elements and many compounds display semiconductor properties, silicon, germanium, and compounds of gallium are the most widely used in electronic devices. Elements near the so-called ""metalloid staircase"", where the metalloids are located on the periodic table, are usually used as semiconductors.The nickname of the southern area of Northern California is Silicon Valley because of all the influential tech companies that have their headquarters there. An integral part of today’s technology is built upon semiconductors, which are made primarily of silicon. Some major companies include Marvell Technology Group, National Semiconductor (now part of Texas Instruments), and Advanced Micro Devices.