Download Microelectronic devices and circuits

Microelectronic devices and circuits
Teaching Goal and Basic Requirements:
This course is the one of basic microelectronic courses for ISEE Undergraduates.
Content of Courses & Hours Allocation:
This course includes 48 hours teaching in classroom.
1. Charge Carriers and Transport
8 hours
 Electrons and holes in semiconductors; generation and recombination; intrinsic
conductivity; doping; extrinsic carrier concentration; p-and n-type semiconductors;
excess carriers; minority carrier lifetime.
 Mobility and conductivity; diffusion; the Einstein relation, quasi-neutrality, and dielectric
relaxation; role of minority carriers.
2. P-N Junctions
8 hours
 Space charge in doped semiconductor; depletion and diffusion, capacitances; PoissonBoltzmann equation; Debye length; boundary conditions at edge of space charge layer.
 Diode I-V characteristics; incremental equivalent circuit. Application in Light emitting
diodes. Optical injection of carriers; photodiodes; solar cells.
3. Electronic States in Semiconductor
6 hours
 Band structure theory of semiconductors; density of states.
 Fermi energies, impurities and defects in semiconductors; hot electrons.
4. MOS Field Effect Transistors
12 hours
 MOS capacitor: accumulation, depletion, inversion, VFB, VT, QA, and QN, strong
inversion with depletion approximation; factors that control threshold voltage.
 MOS transistors: gradual channel approximation; I-V characteristics in strong inversion;
channel length modulation; velocity saturation. Incremental model including Early effect,
back gate effect, and capacitive elements; sub-threshold physics; drain current;
comparison to BJT.
 MOS Limitations: intrinsic high frequency limitations of MOSFETs, sub-threshold
current velocity saturation, surface mobility, short and narrow channel effects, hot
carriers MOSFET breakdown, MOSFET scaling, numerical simulation of MOSFET
characteristics.
5. Introduction to CMOS
14 hours
 CMOS analysis: switching delays, power dissipation, speed/power trade-offs. Subthreshold leakage; transfer characteristics, noise margins, optimal device sizing.
 Linear amplifier basics: performance metrics, current source biasing, current mirrors,
mid-band range, two-port representation.
 Differential amplifiers: large signal transfer characteristics; small signal analysis using
common- and difference-mode inputs.
 Multi-stage amplifiers: current source biasing; output stages; active loads, biasing for
maximum gain, input and output swings; stage selection, frequency response.
 Single-transistor building block stages: common-source, common-gate, and commondrain stages; the Miller effect; Intrinsic frequency limitations of MOSFETs.
Teaching Plan:
1. Assign exercises biweekly.
2. Teaching via multimedia course wares in class.
3. Three hours of teaching in class and 1 hour of course project.
4. Total score = midterm exam (15%) + final exam (25%) +discussion (20%)+homework(20%)
+project( 20% )
Textbook:
R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 3rd International edition, Wiley,
New York
Reference books:
Fonstad, Clifton. Microelectronic Devices and Circuits. 2006 Electronic Edition.
Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach. Upper Saddle River, NJ:
Prentice Hall, 1996. ISBN: 9780135885185.
Pierret, Robert. Volume I: Semiconductor Fundamentals. 2nd ed. Upper Saddle River, NJ: Prentice Hall,
1988. ISBN: 9780201122954.
Neudeck, George. Volume II: The PN Junction Diode. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1998.
ISBN: 9780201122961.
Neudeck, George. Volume III: The Bipolar Junction Transistor. 2nd ed. Upper Saddle River, NJ: Prentice
Hall, 1989. ISBN: 9780201122978.
Pierret, Robert. Volume IV: Field Effect Devices. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1990.
ISBN: 9780201122985.
Tentative Calendar
WEEK
TOPICS
1
Electrons and holes in semiconductors; intrinsic conductivity; Doping; p-and n-type
semiconductors.
2
Detailed balance and mass action; extrinsic carrier concentration. Excess carriers;
generation and recombination; minority carrier lifetime.
3
Space charge in doped semiconductor. Depletion and diffusion, capacitances, PoissonBoltzmann equation; Debye length. Boundary conditions at edge of space charge layer.
4
Reverse biased junctions. Consider forward bias and the special case of minority carrier
injection into quasi-neutral regions; Forward biased p-n junctions: carrier injection, I-V
characteristics
5
Diode I-V characteristics Incremental equivalent circuit. Application in Light emitting
diodes. Optical injection of carriers; photodiodes; solar cells.
6
Band structure theory of semiconductors, density of states; Fermi energies, impurities
and defects in semiconductors, hot electrons.
7
MOS capacitor: accumulation, depletion, inversion, VFB, VT, QA, and QN. strong
inversion with depletion approximation; factors that control threshold voltage.
8
MOS transistors I: gradual channel approximation; I-V characteristics in strong
inversion; channel length modulation; velocity saturation.
Midterm
9
MOS transistors II: Incremental model including Early effect, back gate effect, and
capacitive elements; Sub-threshold physics; drain current; comparison to BJT.
10
MOS Limitations: intrinsic high frequency limitations of MOSFETs, sub-threshold
current velocity saturation, surface mobility, short and narrow channel effects, hot
carriers MOSFET breakdown, , numerical simulation of MOSFET characteristics.
11
CMOS analysis: switching delays, power dissipation, speed/power trade-offs. Subthreshold leakage; transfer characteristics, noise margins, optimal device sizing;
MOSFET scaling.
12
Linear amplifier basics: performance metrics, current source biasing, current mirrors,
mid-band range, two-port representation.
13
Differential amplifiers: large signal transfer characteristics; small signal analysis using
common- and difference-mode inputs.
14
Multi-stage amplifiers: current source biasing; output stages; active loads, biasing for
maximum gain, input and output swings; stage selection, frequency response.
15
Single-transistor building block stages: common-source, common-gate, and commondrain stages; the Miller effect; Intrinsic frequency limitations of MOSFETs
WEEK
TOPICS
16
Semester wrap-up; Final reviews
17
Final exams