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EI010 304 Electronic Devices and Circuits I Teaching scheme 3 hours lecture and 1 hour tutorial per week Credits: 4 Objectives 1. 2. 3. 4. 5. To provide adequate knowledge to various electronic devices and electronic circuits. To impart the basic concepts of electronic devices such as diodes, BJT, FET and MOSFET. To give a basic introduction of different types of special devices. To have an adequate knowledge in power supplies and wave shaping circuits. To provide basic knowledge in transistor biasing and amplifier configurations. Module 1 (12 Hours) Band theory of solids: Energy band structure of Metals, Semi conductors and Insulators. Intrinsic material - Electron Hole pair- Fermi level- Doping- Extrinsic material- Effect of temperature. Semi conductor diodes: Theory of PN junction diode- Energy band structure- Diode equation. Space charge and diffusion capacitance (concepts only)-Break down mechanisms. Fabrication of PN junction –Different techniques Module 2 (12 Hours) Bipolar Junction Transistors: Fundamentals of BJT operation- Amplification with BJT-Switching--Drift in base region—Base narrowing—Frequency limitations of transistors. Field Effect Transistors: Basic structure- Operation- Pinch off and saturation—V I characteristics. MOSFETS: n MOS and p MOS- Enhancement and Depletion types—MOS capacitance. Module 3 (12 Hours) Special Devices: Tunnel diode, IMPATT diode, GUNN diode, Schottkey diode, Varactor diode, Photo diode, PIN diode, LED, Schottkey transistor, Photo transistor, UJT, SCR, DIAC, TRIAC, IGBT, OptoCoupler, Seven Segment Displays, Liquid Crystal Displays, LDR. Module 4 (12 Hours) DC power supplies: Analysis of half wave, full wave and bridge rectifiers-Analysis of shunt capacitor filter. Regulated power supplies: series and shunt voltage regulators—design of regulated power supplies—IC regulated power supplies Wave shaping circuits: Clipping and Clamping circuits—Integrator—Differentiator. Module 5 (12 Hours) Transistor biasing: Operating point—DC and AC load lines—Q point selection—Different types of biasing—Biasing stability factors. Different transistor amplifier configurations – Comparison -- h parameter model analysis of CE configuration. Text Books:1. 2. Streetman, B. and Sanjay, B., “Solid State Electronics Devices”, Pearson Education. Boylsted and Nashelsky, “Electronic Devices and Circuit Theory”, Prentice Hall of India. References: 1. 2. 3. 4. 5. . Millman and Halkias, “Electronic Devices and Circuits”, Tata McGraw– Hill. Floyd, T.L, “Electronic Devices” Pearson Education.. Millman and Halkias, “Integrated Electronics”, McGraw-Hill. J B Gupta, “Electronic Devices and Circuits” , S K Kataria & Sons Pub. David A. Bell, ‘Electronic Devices & Circuits’, Prentice Hall of India/Pearson Education,