Download Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0386

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0386
Features
Description
• Cascadable 50 Ω Gain Block
The MSA-0386 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
• 3 dB Bandwidth:
DC to 2.4 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P1 dB at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface
Mount Semiconductors”.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9571E
OUT
MSA
Vd = 5 V
6-314
86 Plastic Package
MSA-0386 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
70 mA
400 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance[2,4]:
θjc = 115°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 9.5 mW/°C for TC > 116°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
f = 0.1 GHz
f = 1.0 GHz
f = 0.1 to 1.6 GHz
Units
Min.
Typ.
10.0
12.5
12.0
dB
dB
± 0.7
GHz
2.4
Input VSWR
f = 0.1 to 3.0 GHz
1.5:1
Output VSWR
f = 0.1 to 3.0 GHz
1.7:1
NF
50 Ω Noise Figure
f = 1.0 GHz
dB
6.0
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
10.0
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
tD
Group Delay
f = 1.0 GHz
psec
140
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
4.0
5.0
Max.
6.0
–8.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0386-TR1
MSA-0386-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-315
MSA-0386 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.11
.11
.11
.10
.10
.09
.09
.12
.18
.25
.32
.40
.53
174
169
159
149
142
137
139
149
150
142
133
124
106
12.5
12.5
12.4
12.2
12.1
11.9
11.2
10.3
9.4
8.3
7.2
6.0
3.7
4.22
4.20
4.16
4.09
4.00
3.93
3.61
3.28
2.95
2.60
2.29
2.01
1.53
175
170
159
149
139
129
106
83
66
48
31
15
–13
–18.3
–18.2
–18.1
–17.9
–17.6
–17.4
–16.6
–15.3
–14.4
–13.7
–13.2
–13.0
–12.8
.122
.124
.124
.128
.131
.136
.149
.171
.190
.207
.219
.224
.228
1
2
5
8
9
11
14
13
12
9
3
–1
–11
.13
.13
.14
.15
.16
.18
.20
.23
.26
.29
.30
.31
.32
–11
–20
–41
–60
–78
–93
–129
–157
–176
167
152
142
128
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
60
12
TC = +85°C
50 TC = +25°C
I d (mA)
P1 dB
Id = 20 mA
Id = 35 mA
4
10
Gain Flat to DC
0
0.1
0.3 0.5
1.0
3.0
0
6.0
1
2
FREQUENCY, (GHz)
3
4
5
6
6.5
NF (dB)
P1 dB (dBm)
6.0
5.5
I d = 20 mA
I d = 35 mA
I d = 20 mA
I d = 50 mA
5.0
0.2 0.3
0.5
1.0
2.0
4.0
+25
+55
+85
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=35mA.
6
0
0.1
0
Vd (V)
12
I d = 35 mA
–25
Figure 2. Device Current vs. Voltage.
15
I d = 50 mA
NF
6
TEMPERATURE (°C)
7.0
18
7
5
0
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C.
10
8
20
Id = 50 mA
2
11
9
30
NF (dB)
G p, (dB)
6
3
GP
40
8
9
12
11
TC = –25°C
10
13
P1 dB (dBm)
14
G p (dB)
(unless otherwise noted)
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-316
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
45°
RF INPUT
1
GROUND
1.52 ± 0.25
(0.060 ± 0.010)
4
RF OUTPUT
AND DC BIAS
A03
GROUND
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
2
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-317