Download Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0385

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0385
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P1 dB at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
Description
The MSA-0385 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9570E
OUT
MSA
Vd = 5 V
6-310
85 Plastic Package
MSA-0385 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
70 mA
400 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance[2,4]:
θjc = 105°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 9.5 mW/°C for TC > 108°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Units
f = 0.1 GHz
f = 1.0 GHz
dB
f = 0.1 to 1.6 GHz
dB
Min.
Typ.
10.0
12.5
12.0
± 0.7
GHz
2.5
f = 0.1 to 3.0 GHz
Output VSWR
f = 0.1 to 3.0 GHz
NF
50 Ω Noise Figure
f = 1.0 GHz
Max.
1.5:1
1.7:1
dB
6.0
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
10.0
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
125
4.0
5.0
6.0
–8.0
Note:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
6-311
MSA-0385 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
S21
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.09
.09
.08
.07
.07
.06
.05
.08
.12
.20
.25
.28
.42
.50
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
178
171
166
160
155
152
–169
–174
–173
178
170
160
134
99
12.6
12.5
12.4
12.3
12.1
11.9
11.2
10.4
9.5
8.4
7.5
6.5
4.7
2.7
4.26
4.24
4.17
4.10
4.01
3.92
3.63
3.29
2.98
2.64
2.36
2.12
1.71
1.37
175
170
161
151
142
133
112
92
79
63
47
33
7
–18
–18.1
–18.4
–18.4
–18.0
–17.9
–17.6
–16.5
–15.6
–14.6
–14.1
–13.5
–13.0
–12.2
–12.0
.124
.120
.121
.126
.127
.132
.149
.167
.186
.198
.211
.207
.224
.252
2
3
6
8
12
12
18
19
22
20
17
13
4
–7
.13
.13
.14
.15
.16
.18
.21
.23
.25
.26
.25
.24
.20
.23
–10
–20
–41
–57
–71
–84
–112
–136
–150
–166
–174
–180
168
133
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
14
60
12
TC = +85°C
50 TC = +25°C
Gain Flat to DC
12
TC = –25°C
10
6
G p (dB)
40
8
I d (mA)
30
0
0.1
0.3 0.5
1.0
3.0
0
1
2
3
4
5
15
6
20
25
18
12
40
50
7.0
15
GP
10
9
8
P1 dB (dBm)
6.5
P1 dB (dBm)
P1 dB
35
Figure 3. Power Gain vs. Current.
Figure 2. Device Current vs. Voltage.
13
30
I d (mA)
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 35 mA.
11
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
4
0
6.0
FREQUENCY (GHz)
G p (dB)
8
6
10
2
NF (dB)
10
20
4
12
I d = 50 mA
NF (dB)
G p (dB)
14
9
I d = 35 mA
6.0
6
5.5
7
NF
I d = 20 mA
I d = 35 mA
3
6
5
–25
0
+25
+55
+85
I d = 20 mA
0
0.1
0.2 0.3
I d = 50 mA
5.0
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=35mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-312
85 Plastic Package Dimensions
.020
.51
GROUND
4
0.143 ± 0.015
3.63 ± 0.38
1
RF INPUT
RF OUTPUT
AND BIAS
2
GROUND
.060 ± .010
1.52 ± .25
3
A03
45°
.085
2.15
5° TYP.
.07
0.43
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
.286 ± .030
7.36 ± .76
6-313