Download BFQ 81

BFQ 81
NPN Silicon RF Transistor
• For low-noise amplifiers up to 2GHz
and broadband analog and digital
applications in telecommunications systems at
collector currents from 0.5 mA to 20 mA.
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFQ 81
SOT-23
RAs
Q62702-F1049
1=B
2=E
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
16
Collector-emitter voltage
VCES
25
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2
Collector current
IC
30
Base current
IB
4
Total power dissipation
Ptot
TS ≤ 59 °C
Values
Unit
V
mA
mW
280
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 325
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-12-1996
BFQ 81
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
16
100
nA
-
-
100
IEBO
µA
-
-
10
hFE
IC = 15 mA, VCE = 8 V
Semiconductor Group
-
ICBO
VEB = 2 V, IC = 0
DC current gain
µA
-
VCB = 10 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 25 V, VBE = 0
Collector-base cutoff current
V
50
2
120
200
Dec-12-1996
BFQ 81
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
4.5
pF
-
0.39
0.6
-
0.19
-
-
0.9
-
Cce
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
5.8
Ccb
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz
F
Noise figure
dB
IC = 5 mA, VCE = 8 V, ZS = ZSopt
f = 900 MHz
-
1.45
-
f = 1.8 GHz
-
2.2
-
f = 900 MHz
-
16
-
f = 1.8 GHz
-
10.5
-
f = 900 MHz
-
13
-
f = 1.8 GHz
-
7.5
-
Power gain
2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-12-1996
BFQ 81
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
17.03
fA
BF =
110
-
NF =
0.80846
-
VAF =
35
V
IKF =
0.22241
A
ISE =
5.8728
fA
NE =
1.0668
-
BR =
25.974
-
NR =
0.36321
-
VAR =
2.3785
V
IKR =
0.011566 A
ISC =
169.77
fA
NC =
1.2237
-
RB =
5.7058
Ω
IRB =
0.11894
mA
RBM =
1.5489
Ω
RE =
1.1731
Ω
RC =
0.3715
Ω
CJE =
33.977
fF
VJE =
0.4318
V
MJE =
1.7707
-
TF =
21.842
ps
XTF =
0.26781
-
VTF =
0.48042
V
ITF =
14.701
mA
PTF =
0
deg
CJC =
693.81
fF
VJC =
0.26339
V
MJC =
0.24448
-
XCJC =
0.1254
-
TR =
1.2554
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.74346
-
TNOM
300
K
LBI =
0.85
nH
LBO =
0.51
nH
LEI =
0.69
nH
LEO =
0.61
nH
LCI =
0
nH
LCO =
0.49
nH
CBE =
73
fF
CCB =
84
fF
CCE =
165
fF
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-12-1996
BFQ 81
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
260
Ptot
240
TS
220
200
180
TA
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
RthJS
10 2
Ptotmax/PtotDC
-
K/W
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
5
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Dec-12-1996
BFQ 81
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
0.9
7
pF
Ccb
GHz
fT
0.7
5V
5
2V
0.6
0.5
4
0.4
3
1V
0.3
2
0.2
0.7V
1
0.1
0.0
0
0
4
8
12
16
V
VR
22
0
5
10
15
20
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
18
mA
IC
35
12
dB
G
25
10V
10V
dB
5V
3V
14
5V
G
2V
3V
8
2V
12
6
10
1V
8
4
1V
6
2
4
0.7V
0.7V
0
2
0
0
5
10
Semiconductor Group
15
20
25
mA
IC
-2
0
35
6
5
10
15
20
25
mA
IC
35
Dec-12-1996
BFQ 81
Power Gain Gma, Gms = f(VCE):_____
|S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
18
28
IC=15mA
G
8V
dBm
0.9GHz
dB
IP3
14
0.9GHz
24
5V
22
3V
12
20
1.8GHz
10
2V
18
8
16
1.8GHz
14
6
1V
12
4
10
2
8
0
6
0
2
4
6
8
V
12
0
4
8
12
16
20
24
V CE
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
35
28 mA 34
IC
28
IC=15mA
dB
dB
IC=15mA
24
G
G
25
22
20
18
20
16
14
15
12
10
10
8
5
0
0.0
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
10V
6
2V
1V
0.7V
4
GHz
f
2
0
0.0
3.5
7
0.5
1.0
1.5
2.0
2.5
10V
2V
1V
0.7V
GHz 3.5
f
Dec-12-1996