Download BDTIC Digital Transistors (Built-in Resistors) DTC144TM/DTC144TE/DTC144TUA DTC144TKA /DTC144TCA/DTC144TSA

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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
DTC144TM/DTC144TE/DTC144TUA
DTC144TKA /DTC144TCA/DTC144TSA
·Equivalent Circuit
DIGITAL TRANSISTOR (NPN)
FEATURES

Built-in bias resistors enable the configuration of an inverter circuit
BDTIC
without connecting external input resistors(see equivalent circuit)

The bias resistors consist of thin-film resistors with complete isolation
to allow negative biasing of the input.They also have the advantage
of almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making device design easy
PIN CONNENCTIONS and MARKING
DTC144TM
SOT-723
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING: 06
SOT-323
DTC144TKA
SOT-23-3L
1. IN
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING: 06
DTC144TCA
SOT-523
1. IN
MARKING:06
DTC144TUA
DTC144TE
MARKING: 06
SOT-23
DTC144TSA
TO-92S
1. IN
1. GND
2. GND
2. OUT
3. OUT
3. IN
MARKING: 06
www.BDTIC.com/jcst
B,Mar,2012
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Limits(DTC144T□)
Parameter
M
E
UA
KA
Unit
CA
SA
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
100
mA
IC
Collector Current
PD
Power Dissipation
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
100
150
200
200
200
300
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
BDTIC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=50µA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
IC=5mA,IB=0.5mA
0.3
V
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Input resistor
R1
Transition frequency
fT
VCE=5V,IC=1mA
VCE=10V,IE=-5mA, f=100MHz
www.BDTIC.com/jcst
100
300
600
32.9
47
61.1
250
kΩ
MHz
B,Mar,2012
Typical Characteristics
DTC144TXX
Static Characteristic
COMMON
EMITTER
Ta=25℃
4
hFE
7uA
6uA
5uA
2
4uA
3uA
1
IC
Ta=25℃
DC CURRENT GAIN
8uA
3
——
Ta=100℃
9uA
IC
(mA)
10uA
COLLECTOR CURRENT
hFE
1000
5
100
2uA
COMMON EMITTER
VCE= 5V
IB=1uA
10
0.1
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
VCEsat
3000
——
8
VCE (V)
IC
1
COLLECTOR CURRENT
IC
100
——
10
IC
100
(mA)
VBE
(mA)
IC
Ta=100 ℃
Ta=25℃
β=10
1
10
COLLECTOR CURREMT
Cob ——
10
IC
100
T =2
5℃
a
1
COMMON EMITTER
VCE=5V
0.1
0.1
1
10
100
BASE-EMMITER VOLTAGE VBE (V)
(mA)
VCB
PD
350
f=1MHz
IE=0
300
(pF)
POWER DISSIPATION
PD (mW)
Ta=25 ℃
——
Ta
DTC144TSA
250
C
CAPACITANCE
T =1
00℃
a
100
10
0.1
10
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
1000
Cob
200
1
150
100
DTC144TCA/TUA/TKA
DTC144TE
DTC144TM
50
0
0.1
0
10
20
REVERSE VOLTAGE
V
(V)
30
40
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
Ta
125
(℃ )
150
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