Download BDTIC Digital Transistors (Built-in Resistors) DTC114TM/DTC114TE/DTC114TUA DTC114TKA /DTC114TCA/DTC114TSA

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
page
3
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
DTC114TM/DTC114TE/DTC114TUA
DTC114TKA /DTC114TCA/DTC114TSA
·Equivalent Circuit
DIGITAL TRANSISTOR (NPN)
FEATURES

Built-in bias resistors enable the configuration of an inverter circuit
BDTIC
without connecting external input resistors(see equivalent circuit)

The bias resistors consist of thin-film resistors with complete isolation
to allow negative biasing of the input.They also have the advantage of
almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making device design easy
PIN CONNENCTIONS and MARKING
DTC114TM
SOT-723
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING: 04
SOT-323
DTC114TKA
SOT-23-3L
1. IN
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING: 04
DTC114TCA
SOT-523
1. IN
MARKING:04
DTC114TUA
DTC114TE
MARKING: 04
SOT-23
DTC114TSA
TO-92S
1. IN
1. GND
2. GND
2. OUT
3. OUT
3. IN
MARKING: 04
www.BDTIC.com/jcst
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Limits(DTC114T□)
Parameter
M
E
UA
KA
Unit
CA
SA
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
100
mA
IC
Collector Current -Continuous
PD
Power Dissipation
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
100
150
200
200
200
300
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
BDTIC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=50µA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
VCE(sat)
IC=10mA,IB=1mA
0.3
V
DC current gain
hFE
VCE=5V,IC=1mA
Input resistor
R1
Transition frequency
fT
Collector-emitter saturation voltage
VCE=10V,IE=-5mA, f=100MHz
www.BDTIC.com/jcst
100
300
600
7
10
13
250
kΩ
MHz
Typical Characteristics
DTC114TXX
hFE
Static Characteristic
1000
COMMON
EMITTER
Ta=25℃
9uA
8uA
7uA
1.5
6uA
5uA
1.0
IC
Ta=100℃
10uA
2.0
——
hFE
2.5
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
3.0
4uA
Ta=25℃
100
3uA
0.5
2uA
COMMON EMITTER
VCE= 5V
IB=1uA
0.0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
6
10
0.1
7
1
10
COLLECTOR CURRENT
VCE (V)
VCEsat
IC
50
100
IC
——
(mA)
IC
500
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
10
Ta=25℃
Ta=100 ℃
1
0.1
0.1
1
10
COLLECTOR CURREMT
IC
100
——
IC
Ta=25℃
10
0.1
100
Ta=100 ℃
100
(mA)
1
10
COLLECTOR CURRENT
VBE
Cob/Cib
——
(mA)
VCB/VEB
20
IC
(pF)
(mA)
f=1MHz
IC=0/IE=0
Ta=25 ℃
10
Cib
CAPACITANCE
Ta=2
5℃
T =1
00℃
a
CT
10
COLLECTOR CURRENT
IC
100
1
Cob
COMMON EMITTER
VCE=5V
0.1
0.1
1
10
PD
——
1
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
350
1
0.1
Ta
DTC114TSA
POWER DISSIPATION
PD (mW)
300
250
DTC114TCA/TUA/TKA
200
DTC114TE
150
DTC114TM
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
30
Related documents