Download BDTIC Digital Transistors (Built-in Resistors) DTA115TM/DTA115TE/DTA115TUA DTA115TKA /DTA115TCA/DTA115TSA

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
page
3
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
DTA115TM/DTA115TE/DTA115TUA
DTA115TKA /DTA115TCA/DTA115TSA
·Equivalent Circuit
DIGITAL TRANSISTOR (PNP)
FEATURES
z
Built-in bias resistors enable the configuration of an inverter circuit
(B)
BDTIC
without connecting external input resistors(see equivalent circuit)
z
(C)
(E)
The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.They also have the
advantage of almost completely eliminating parasitic effects
z
Only the on/off conditions need to be set for operation, making device design easy
PIN CONNENCTIONS and MARKING
DTA115TM
SOT-723
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING:99
SOT-323
DTA115TKA
SOT-23-3L
1. IN
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING:99
DTA115TCA
SOT-523
1. IN
MARKING:99
DTA115TUA
DTA115TE
MARKING:99
SOT-23
DTA115TSA
TO-92S
1. IN
1. GND
2. GND
2. OUT
3. OUT
3. IN
MARKING:99
www.BDTIC.com/jcst
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Limits(DTA115T□)
Parameter
M
E
UA
KA
Unit
CA
SA
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
-100
mA
IC
Collector Current
PD
Power Dissipation
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
100
150
200
200
200
300
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
BDTIC
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=-50µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.5
μA
DC current gain
hFE
VCE=-5V,IC=-1mA
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Input resistor
R1
100
600
IC=-1mA,IB=-0.1mA
-0.3
VCE=-10V,IE=5mA, f=100MHz
www.BDTIC.com/jcst
250
70
100
130
V
MHz
kΩ
DTA115TXX
Typical Characteristics
hFE
Static Characteristic
-4.0
1000
COMMON
EMITTER
Ta=25℃
Ta=100℃
-9uA
hFE
-3.0
-8uA
DC CURRENT GAIN
-10uA
COLLECTOR CURRENT
IC
(mA)
-3.5
—— IC
-2.5
-7uA
-2.0
-6uA
-1.5
-5uA
-1.0
-3uA
-4uA
Ta=25℃
100
-2uA
-0.5
COMMON EMITTER
VCE= -5V
IB=-1uA
-0.0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
-10
10
-0.1
-12
IC
-1000
-1
-10
COLLECTOR CURRENT
VCE (V)
PD
350
——
IC
-100
(mA)
Ta
BDTIC
DTA115TSA
300
POWER DISSIPATION
PD (mW)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
-100
Ta=100 ℃
Ta=25℃
-10
-0.1
250
DTA115TCA/TUA/TKA
200
DTA115TE
150
DTA115TM
100
50
0
-1
-10
COLLECTOR CURRENT
IC
(mA)
-100
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
Ta
125
(℃ )
150
Related documents