Download BDTIC Digital Transistors (Built-in Resistors) DTA144TM/DTA144TE/DTA144TUA DTA144TKA /DTA144TCA/DTA144TSA

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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
DTA144TM/DTA144TE/DTA144TUA
DTA144TKA /DTA144TCA/DTA144TSA
·Equivalent Circuit
DIGITAL TRANSISTOR (PNP)
FEATURES

Built-in bias resistors enable the configuration of an inverter circuit
BDTIC
without connecting external input resistors(see equivalent circuit)

The bias resistors consist of thin-film resistors with complete isolation
to allow positive biasing of the input.They also have the advantage of
almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making device design easy
PIN CONNENCTIONS and MARKING
DTA144TM
SOT-723
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING:96
SOT-323
DTA144TKA
SOT-23-3L
1. IN
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING:96
DTA144TCA
SOT-523
1. IN
MARKING:96
DTA144TUA
DTA144TE
MARKING:96
SOT-23
DTA144TSA
TO-92S
1. IN
1. GND
2. GND
2. OUT
3. OUT
3. IN
MARKING:96
www.BDTIC.com/jcst
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Limits(DTA144T□)
M
E
UA
KA
CA
Unit
SA
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
-100
mA
IC
Collector Current
PD
Power Dissipation
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
100
150
200
200
200
300
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
BDTIC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=-50µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.5
μA
IC=-5mA,IB=-0.5mA
-0.3
V
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Input resistor
R1
Transition frequency
fT
VCE=-5V,IC=-1mA
VCE=-10V,IE=5mA, f=100MHz
www.BDTIC.com/jcst
100
300
600
32.9
47
61.1
250
kΩ
MHz
Typical Characteristics
DTA144TXX
hFE
Static Characteristic
1000
COMMON
EMITTER
Ta=25℃
COLLECTOR CURRENT
DC CURRENT GAIN
-9uA
-8uA
-7uA
-6uA
-1.0
IC
Ta=100℃
-10uA
-1.5
——
hFE
-2.0
IC
(mA)
-2.5
-5uA
-4uA
Ta=25℃
100
-3uA
-0.5
-2uA
COMMON EMITTER
VCE= -5V
IB=-1uA
-0.0
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-6
10
-0.1
-7
-1
-10
COLLECTOR CURRENT
VCE (V)
VCEsat
IC
-50
IC
——
-100
(mA)
IC
-5000
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
-10
Ta=25℃
Ta=100 ℃
-1
-0.1
-0.1
-1
IC
-1
-10
COLLECTOR CURRENT
VBE
10
CO
IC
(mA)
VR
f=1MHz
IC=0/IE=0
(pF)
Ta=25℃
-1
COMMON EMITTER
VCE=-5V
-0.1
-0.1
-1
-10
-100
PD
350
Ta=25 ℃
——
1
0.1
-0.1
-1
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
Ta
DTA144TSA
300
POWER DISSIPATION
PD (mW)
——
-100
CO
OUTPUT CAPACITANCE
IC
Ta=100℃
-10
COLLECTOR CURRENT
Ta=25℃
(mA)
(mA)
-100
——
IC
Ta=100 ℃
-100
-10
-0.1
-10
COLLECTOR CURREMT
-1000
250
DTA144TCA/TUA/TKA
200
DTA144TE
150
DTA144TM
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
-10
VR
(V)
-30
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