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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Diodes
UMG3N
SOT-353
General purpose transistors (dual transistors)
FEATURES
z Two DTC143T chips in a package
z Mounting possible with SOT-353 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
1
Marking: G3
(3)
(2)
(1)
R1
DTr1
BDTIC
Equivalent circuit
R1
DTr2
(4)
(5)/(6)
Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Value
Units
Collector-Base Voltage
50
V
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
V
Collector Current -Continuous
100
mA
Collector Dissipation
150
mW
Junction temperature
150
℃
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Test
conditions
Min
Typ
Max
Unit
IC=50μA,IE=0
50
V(BR)CEO
IC=1mA,IB=0
50
V
V(BR)EBO
IE=50μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
hFE
VCE=5V,IC=1mA
DC current gain
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Input resistor
R1
V
100
600
IC=5mA,IB=0.25mA
0.3
VCE=10V,IE=-5mA, f=100MHz
250
3.29
www.BDTIC.com/jcst
4.7
V
MHz
6.11
KΩ
A,Dec,2010
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