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IKP20N60T
TRENCHSTOP™ Series
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Features:

Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

Designed for :
- Frequency Converters
- Uninterrupted Power Supply

TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)

Positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC1 for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
BDTIC
Type
IKP20N60T
PG-TO220-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
600V
20A
1.5V
175C
K20T60
PG-TO220-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage, Tj ≥ 25C
VCE
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
IC
Value
600
20
ICpul s
60
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
60
TC = 25C
TC = 100C
IF
V
40
Pulsed collector current, tp limited by Tjmax
Diode forward current, limited by Tjmax
Unit
A
40
20
Diode pulsed current, tp limited by Tjmax
IFpul s
60
Gate-emitter voltage
VGE
20
V
tSC
5
s
Power dissipation TC = 25C
Ptot
166
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Short circuit withstand time
2)
VGE = 15V, VCC  400V, Tj  150C
1
2)
C
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
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IFAG IPC TD VLS
1
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
RthJC
0.9
RthJCD
1.5
RthJA
62
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
BDTIC
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j =2 5 C
-
1.5
2.05
T j =1 7 5 C
-
1.9
-
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
V G E = 15 V , I C = 20 A
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 0V , I F = 2 0 A
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
T j =2 5 C
-
1.65
2.05
T j =1 7 5 C
-
1.6
-
4.1
4.9
5.7
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
1500
I C = 29 0µ A , V C E = V G E
V C E = 60 0 V ,
V G E = 0V
Zero gate voltage collector current
ICES
µA
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 20 A
-
11
-
S
Integrated gate resistor
RGint
-
Ω
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
1100
-
Output capacitance
Coss
V G E = 0V ,
-
71
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
32
-
-
120
-
nC
Gate charge
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
V C C = 48 0 V, I C =2 0 A
V G E = 15 V
pF
LE
PG - T O 2 2 0- 3
-
7
-
nH
IC(SC)
V G E = 15 V ,t S C  5 s
V C C = 4 0 0 V,
T j  150C
-
183.3
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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IFAG IPC TD VLS
2
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
18
-
-
14
-
-
199
-
-
42
-
-
0.31
-
-
0.46
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
T j=25 C,
VCC=400V,IC=20A,
VGE=0/15V,rG=12,
L =131nH,C=31pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
BDTIC
Total switching energy
Ets
-
0.77
-
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =2 5 C ,
-
41
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 2 0 A,
-
0.31
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 8 0 A/ s
-
13.3
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
711
-
A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
18
-
-
18
-
-
223
-
-
76
-
-
0.51
-
-
0.64
-
-
1.15
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=175 C,
VCC=400V,IC=20A,
VGE=0/15V,rG=12,
L =131nH,C=31pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =1 7 5 C
-
176
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 2 0 A,
-
1.46
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 8 0 A/ s
-
18.9
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
467
-
A/s
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IFAG IPC TD VLS
3
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
tp =2µs
10µs
50A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A
T C =80°C
40A
T C =110°C
30A
20A
Ic
10A
50µs
1A
1ms
10ms
DC
BDTIC
10A
0A
10H z
Ic
100H z
1kHz
10kHz
0.1A
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj  175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 12)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
160W
30A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
140W
120W
100W
80W
60W
40W
25A
20A
15A
10A
5A
20W
0W
25°C
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj  175C)
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE  15V, Tj  175C)
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IFAG IPC TD VLS
4
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
50A
V GE =20V
V G E =20V
40A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
50A
15V
13V
30A
11V
9V
20A
7V
40A
15V
13V
30A
11V
20A
7V
9V
BDTIC
10A
10A
0A
0A
0V
1V
2V
3V
0V
IC, COLLECTOR CURRENT
35A
30A
25A
20A
15A
10A
T J = 1 7 5 °C
5A
2 5 °C
0A
0V
2V
4V
6V
2V
3V
2.5V
IC =40A
2.0V
1.5V
IC =20A
1.0V
IC =10A
0.5V
0.0V
0°C
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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IFAG IPC TD VLS
4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
1V
5
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
t d(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
tf
t d(on)
10ns
tf
100ns
t d(on)
BDTIC
tr
tr
1ns
10ns
0A
5A
10A
15A
20A
25A
30A
35A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 12Ω,
Dynamic test circuit in Figure E)







RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
t d(off)
100n s
tf
t d(on )
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
tr
10 ns
25°C
50 °C
75°C
0V
-50°C
100°C 12 5°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 20A, rG=12Ω,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.29mA)
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IFAG IPC TD VLS
150°C
6
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
*) Eon and Ets include losses
due to diode recovery
2 .4m J
Ets*
2.0mJ
1.6mJ
1.2mJ
Eoff
0.8mJ
*) E on a nd E ts in clu d e lo sse s
d u e to d io d e reco ve ry
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.4mJ
E ts *
2 .0m J
1 .6m J
E off
1 .2m J
0 .8m J
BDTIC
0.4mJ
0 .4m J
E on *
Eon*
0 .0m J
0.0mJ
0A
5A
10A
15A
20A
25A
30A

35A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 12Ω,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery


2.0m J
1.8m J
Ets*
0.8mJ
0.6mJ
Eoff
0.4mJ
0.2mJ

RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
Eon*
*) E on and E ts include losses
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.0mJ

1.6m J
1.4m J
1.2m J
1.0m J E ts *
E off
0.8m J
0.6m J
0.4m J
E on *
0.2m J
0.0mJ
25°C
50°C
75°C
0.0m J
300V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 20A, rG = 12Ω,
Dynamic test circuit in Figure E)
350V
400V
450V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 20A, rG = 12Ω,
Dynamic test circuit in Figure E)
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IFAG IPC TD VLS
500V
7
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
1nF
VGE, GATE-EMITTER VOLTAGE
C iss
c, CAPACITANCE
15V
120V
480V
10V
100pF
C oss
C rss
5V
BDTIC
0V
0nC
10pF
30nC
60nC
90nC
120nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=20 A)
0V
10V
20V
30V
40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
300A
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
250A
200A
150A
100A
50A
0A
12V
14V
16V
10µs
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE  400V, Tj  150C)
11V
12V
13V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
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IFAG IPC TD VLS
14V
8
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
0
0.2
-1
10 K/W
0.1
0.05
0.02
R,(K/W)
0.18715
0.31990
0.30709
0.07041
, (s)
6.925*10-2
1.085*10-2
6.791*10-4
9.59*10-5
R1
R2
ZthJC, TRANSIENT THERMAL IMPEDANCE
ZthJC, TRANSIENT THERMAL IMPEDANCE
D=0.5
10 K/W D=0.5
0.2
R,(K/W)
0.13483
0.58146
0.44456
0.33997
0.1
-1
10 K/W
0.05
, (s)
9.207*10-2
1.821*10-2
1.47*10-3
1.254*10-4
R1
0.02
0.01
6.53*10
R2
C 1 =  1 /R 1
C 2 =  2 /R 2
BDTIC
0.01
-2
10 K/W
C 1 =  1 /R 1
C 2 =  2 /R 2
single pulse
single pulse
-2
1µs
10µs 100µs
1ms
10 K/W
1µs
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
10µs
100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
1.8µC
1.6µC
T J =175°C
200ns
TJ=175°C
150ns
100ns
50ns
TJ=25°C
0ns
600A/µs
900A/µs
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
250ns
1.4µC
1.2µC
1.0µC
0.6µC
0.4µC
0.2µC
600A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=20A,
Dynamic test circuit in Figure E)
T J=25°C
0.8µC
900A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)
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IFAG IPC TD VLS
9
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
T J =175°C
T J=25°C
-750A/µs
20A
16A
T J =25°C
12A
8A
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
24A
-600A/µs
-450A/µs
T J=175°C
-300A/µs
BDTIC
4A
0A/µs
600A/µs
0A
600A/µs
900A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)
900A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=20A,
Dynamic test circuit in Figure E)
T J =25°C
50A
-150A/µs
2.0V
I F =40A
1.5V
20A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
175°C
40A
30A
20A
10A
1.0V
0.5V
10A
0.0V
0°C
0A
0V
1V
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
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IFAG IPC TD VLS
10
150°C
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
PG-TO220-3
BDTIC
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IFAG IPC TD VLS
11
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
BDTIC
Figure C. Definition of diodes
switching characteristics
1
2
r1
r2
n
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
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IFAG IPC TD VLS
12
Rev. 2.7 20.09.2013
IKP20N60T
TRENCHSTOP™ Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
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failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
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IFAG IPC TD VLS
13
Rev. 2.7 20.09.2013