Download IHW30N100R q

Soft Switching Series
IHW30N100R
q
Reverse Conducting IGBT with monolithic body diode
Features:
• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
C
G
E
PG-TO-247-3
BDTIC
Applications:
• Microwave Oven
• Soft Switching Applications
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
1000V
30A
1.5V
175°C
H30R100
PG-TO-247-3
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1000
V
DC collector current
IC
Type
IHW30N100R
Maximum Ratings
A
60
30
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpuls
90
Turn off safe operating area VCE ≤ 1000V, Tj ≤ 175°C
-
90
Diode forward current
IF
60
30
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
IFpuls
90
Gate-emitter voltage
VGE
±20
Transient Gate-emitter voltage (tp < 5 ms)
V
±25
412
W
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Power dissipation, TC = 25°C
Ptot
Operating junction temperature
1
260
J-STD-020 and JESD-022
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Power Semiconductors
1
Rev. 2.2 Nov 08
Soft Switching Series
IHW30N100R
q
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.36
K/W
RthJCD
0.36
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
40
RthJA
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
BDTIC
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
1000
-
-
T j = 25°C
-
1.5
1.7
T j = 150 °C
-
1.7
-
T j = 175 °C
-
1.75
-
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =500 μA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V
V G E = 15 V, I C =30A
VGE=0V, IF=30A
T j = 25°C
-
1.5
1.7
T j = 150 °C
-
1.65
-
T j = 175 °C
-
1.7
-
5.1
5.8
6.4
Gate-emitter threshold voltage
VGE(th)
I C =700 μA,V C E =V G E
Zero gate voltage collector current
ICES
V C E = 10 00 V ,
VGE=0V
μA
T j = 25°C
-
-
5
T j = 175 °C
-
-
2500
Gate-emitter leakage current
IGES
V C E = 0 V , V G E =20V
-
-
600
nA
Transconductance
gfs
V C E =20V, I C =30A
-
56
-
S
Ciss
V C E =25V,
-
2791
-
pF
Coss
VGE=0V,
-
82
-
Reverse transfer capacitance
Crss
f=1MHz
-
78
-
Gate charge
QGate
V C C = 80 0 V, I C =30A
-
209
-
nC
-
13
-
nH
Dynamic Characteristic
Input capacitance
Output capacitance
V G E =15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
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Power Semiconductors
2
Rev. 2.2 Nov 08
Soft Switching Series
IHW30N100R
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
Unit
IGBT Characteristic
Turn-off delay time
td(off)
T j = 25°C ,
-
846
Fall time
tf
V C C = 60 0 V, I C =30A,
-
33.3
Turn-on energy
Eon
V G E = 0 /1 5 V,
-
-
Turn-off energy
Eoff
R G = 2 6Ω ,
-
2.1
Total switching energy
Ets
-
-
mJ
-
BDTIC
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-off delay time
td(off)
T j = 175 °C
-
948
-
Fall time
tf
V C C = 60 0 V,
-
40.4
-
Turn-on energy
Eon
I C =30A,
-
-
-
Turn-off energy
Eoff
V G E = 0 /1 5 V,
-
2.86
-
Total switching energy
Ets
R G = 2 6Ω
-
-
-
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Power Semiconductors
3
mJ
Rev. 2.2 Nov 08
IHW30N100R
q
Soft Switching Series
tp=1µs
90A
70A
20µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
TC=80°C
60A
TC=110°C
50A
40A
30A
Ic
10A
50µs
100µs
500µs
1A
10ms
DC
BDTIC
20A
10A
0A
100Hz
1kHz
10kHz
0.1A
1V
100kHz
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency for triangular
current (Eon = 0, hard turn-off)
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 26Ω)
400W
50A
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATION
350W
300W
250W
200W
150W
100W
40A
30A
20A
10A
50W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
75°C
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Power Semiconductors
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
4
Rev. 2.2 Nov 08
IHW30N100R
q
Soft Switching Series
80A
VGE=20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
15V
60A
13V
11V
9V
40A
7V
20A
VGE=20V
60A
15V
13V
11V
40A
9V
7V
20A
BDTIC
0A
0A
0V
1V
2V
0V
3V
IC, COLLECTOR CURRENT
80A
60A
40A
20A
TJ=175°C
25°C
0A
0V
2V
4V
6V
8V
10V
2V
IC=60A
2.5V
2.0V
IC=30A
1.5V
IC=15A
1.0V
0.5V
0.0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
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Power Semiconductors
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
1V
5
Rev. 2.2 Nov 08
IHW30N100R
q
Soft Switching Series
1000ns
1000ns
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
100ns
100ns
tf
BDTIC
tf
10ns
0A
10A
20A
30A
40A
50A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 600V, VGE = 0/15V, RG=26Ω,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
td(off)
100ns
tf
25°C
50°C
75°C
100°C
125°C
30Ω
6V
max.
5V
typ.
4V
min.
3V
2V
-50°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 600V,
VGE = 0/15V, IC = 30A, RG=26Ω,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.7mA)
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Power Semiconductors
40Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 600V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
1000ns
20Ω
6
Rev. 2.2 Nov 08
IHW30N100R
q
Soft Switching Series
Eoff
4.0mJ
3.0mJ
2.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
5.0mJ
3.0mJ
Eoff
2.0mJ
1.0mJ
BDTIC
1.0mJ
0.0mJ
0.0mJ
0A
10A
20A
30A
40A
20Ω
50A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 600V, VGE = 0/15V, RG=26Ω,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
3.0mJ
Eoff
1.5mJ
1.0mJ
0.5mJ
0.0mJ
25°C
40Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 600V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
2.5mJ
2.0mJ
30Ω
50°C
75°C
Eoff
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
400V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 600V,
VGE = 0/15V, IC = 30A, RG = 26Ω,
Dynamic test circuit in Figure E)
500V
600V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, RG = 26Ω,
Dynamic test circuit in Figure E)
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Power Semiconductors
700V
7
Rev. 2.2 Nov 08
IHW30N100R
q
Soft Switching Series
Ciss
1nF
200V
10V
800V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
15V
Coss
100pF
5V
BDTIC
Crss
0V
0nC
50nC
100nC
150nC
200nC
10pF
250nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
0V
0.2
R,(K/W)
0.1586
0.0987
0.0807
0.026
0.1
0.05
0.02 R 1
τ, (s)
-2
7.03*10
-3
6.76*10
-4
6.53*10
-5
8.22*10
R2
-2
10 K/W
0.01
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
single pulse
10µs
100µs
1ms
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
30V
40V
D=0.5
-1
1µs
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
D=0.5
10 K/W
10V
10ms 100ms
-1
10 K/W
0.2
0.05
0.02 R 1
R2
10 K/W
0.01
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
single pulse
10µs
100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 20. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
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Power Semiconductors
τ, (s)
-2
7.03*10
-3
6.76*10
-4
6.53*10
-5
8.22*10
-2
1µs
tP, PULSE WIDTH
Figure 19. IGBT transient thermal resistance
(D = tp / T)
R,(K/W)
0.1586
0.0987
0.0807
0.026
0.1
8
Rev. 2.2 Nov 08
IHW30N100R
q
Soft Switching Series
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
2.0V
20A
TJ=25°C
175°C
10A
IF=60A
30A
1.5V
15A
1.0V
0.5V
BDTIC
0A
0.0V
0.5V
1.0V
0.0V
-50°C
1.5V
VF, FORWARD VOLTAGE
Figure 21. Typical diode forward current as
a function of forward voltage
0°C
50°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 22. Typical diode forward voltage as a
function of junction temperature
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Power Semiconductors
100°C
9
Rev. 2.2 Nov 08
Soft Switching Series
IHW30N100R
q
PG-TO247-3
M
BDTIC
M
MAX
5.16
2.53
2.11
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
MIN
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
MIN
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
5.44
3
19.80
4.17
3.50
5.49
6.04
MAX
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
Z8B00003327
0
5 5
0
7.5mm
0.214
3
20.31
4.47
3.70
6.00
6.30
0.780
0.164
0.138
0.216
0.238
0.799
0.176
0.146
0.236
0.248
17-12-2007
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Power Semiconductors
10
03
Rev. 2.2 Nov 08
IHW30N100R
q
Soft Switching Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
t
10% Ir r m
dir r /dt
90% Ir r m
VR
BDTIC
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
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Power Semiconductors
11
Rev. 2.2 Nov 08
Soft Switching Series
IHW30N100R
q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
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Rev. 2.2 Nov 08