Download IHW15T120 TrenchStop and Fieldstop

IHW15T120
Soft Switching Series
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
•
•
•
•
•
•
•
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Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Very soft, fast recovery anti-parallel EmCon™ HE diode
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
G
E
PG-TO-247-3
BDTIC
Type
IHW15T120
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
1200V
15A
1.7V
150°C
H15T120
PG-TO247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
IC
A
TC = 25°C
30
TC = 100°C
15
Pulsed collector current, tp limited by Tjmax
ICpuls
45
Turn off safe operating area
-
45
VCE ≤ 1200V, Tj ≤ 150°C
IF
Diode forward current
TC = 25°C
23
TC = 100°C
13
Diode pulsed current, tp limited by Tjmax, Tc=25°C
IFpuls
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
IFSM
Gate-emitter voltage
VGE
±20
V
tSC
10
µs
Power dissipation, TC = 25°C
Ptot
113
W
Operating junction temperature
Tj
-40...+150
°C
Storage temperature
Tstg
-55...+150
Short circuit withstand time
2)
36
50
130
120
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
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Power Semiconductors
1
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
BDTIC
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Power Semiconductors
2
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
1.1
K/W
RthJCD
1.3
RthJA
40
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
BDTIC
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
1200
-
-
T j = 25°C
-
1.7
2.2
T j = 125 °C
-
2.0
-
T j = 150 °C
-
2.2
-
T j = 25°C
-
1.7
2.2
T j = 150 °C
-
1.7
-
5.0
5.8
6.5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =0.5mA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V
V G E = 15 V, I C =15A
VGE=0V, IF=9A
Gate-emitter threshold voltage
VGE(th)
I C =0.6mA,V C E =V G E
Zero gate voltage collector current
ICES
V C E = 12 00 V ,
VGE=0V
mA
T j = 25°C
-
-
0.2
T j = 150 °C
-
-
2.0
Gate-emitter leakage current
IGES
V C E = 0 V , V G E =20V
-
-
100
nA
Transconductance
gfs
V C E =20V, I C =15A
-
10
-
S
Integrated gate resistor
RGint
none
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Power Semiconductors
3
Ω
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
Dynamic Characteristic
Input capacitance
Ciss
V C E =25V,
-
1082
-
Output capacitance
Coss
VGE=0V,
-
82
-
Reverse transfer capacitance
Crss
f=1MHz
-
49
-
Gate charge
QGate
V C C = 96 0 V, I C =15A
-
85
-
nC
-
13
-
nH
-
90
-
A
pF
V G E =15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
V G E =15V,t S C ≤1 0 µs
V C C = 600 V,
T j = 2 5°C
BDTIC
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
50
-
-
30
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
-
520
-
-
60
-
-
1.3
-
-
1.4
-
Ets
T j = 25°C ,
V C C = 60 0 V, I C =15A,
V G E = 0 /1 5V,
R G = 5 6Ω ,
L σ 2 ) =1 80nH,
C σ 2 ) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
2.7
-
Diode reverse recovery time
trr
T j = 25°C ,
-
140
-
Diode reverse recovery charge
Qrr
V R = 80 0 V , I F = 9 A ,
-
950
nC
Diode peak reverse recovery current
Irrm
d i F /d t= 750A/ µs
-
13.3
A
mJ
Anti-Parallel Diode Characteristic
1)
2)
ns
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
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Power Semiconductors
4
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
50
-
-
35
-
Unit
IGBT Characteristic
-
600
-
-
120
-
-
2.0
-
-
2.1
-
Ets
T j = 150 °C ,
V C C = 60 0 V, I C =15A,
V G E = 0 /1 5V,
R G = 5 6Ω
L σ 1 ) =1 80nH,
C σ 1 ) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
4.1
-
Diode reverse recovery time
trr
T j = 150 °C
-
210
-
ns
Diode reverse recovery charge
Qrr
V R = 80 0 V , I F = 9 A ,
-
1600
-
nC
Diode peak reverse recovery current
Irrm
d i F /d t= 750A/ µs
-
16.5
-
A
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
mJ
BDTIC
Anti-Parallel Diode Characteristic
1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
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Power Semiconductors
5
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
tp =2µs
30A
20A
10µs
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
40A
T C =80°C
T C =110°C
Ic
10A
Ic
50µs
1A
200µs
500µs
2ms
0,1A
DC
BDTIC
0A
10H z
100H z
1kH z
10kH z
0,01A
1V
100kH z
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 56Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
30A
80W
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER
100W
60W
40W
20W
0W
25°C
50°C
75°C
100°C
125°C
20A
10A
0A
25°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
75°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
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Power Semiconductors
6
125°C
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
40A
VGE=17V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
40A
15V
30A
13V
11V
20A
9V
7V
VGE=17V
15V
30A
13V
11V
20A
9V
7V
BDTIC
10A
0A
0A
0V
1V
2V
3V
4V
5V
6V
0V
40A
35A
30A
25A
20A
15A
10A
TJ=150°C
25°C
5A
0A
0V
2V
4V
6V
8V
10V
1V
2V
3V
4V
12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
6V
3,0V
IC=30A
2,5V
2,0V
IC=15A
1,5V
IC=8A
IC=5A
1,0V
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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Power Semiconductors
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
10A
7
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
td(off)
1µs
100ns
tf
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
td(on)
tr
10ns
100ns
tf
td(on)
tr
10ns
BDTIC
1ns
0A
10A
1ns
20A
10Ω
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=56Ω,
Dynamic test circuit in Figure E)
35Ω
60Ω
85Ω
110Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=56Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
5V
typ.
4V
min.
3V
2V
1V
0V
-50°C
0°C
50°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.6mA)
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Power Semiconductors
100°C
8
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
*) Eon and Ets include losses
due to diode recovery
5 mJ
8,0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) Eon and Etsinclude losses
due to diode recovery
6,0mJ
4,0mJ
Ets*
Ets*
4 mJ
3 mJ
Eon*
2 mJ
Eoff
BDTIC
2,0mJ
Eoff
1 mJ
Eon*
0,0mJ
5A
10A
15A
20A
0 mJ
25A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=56Ω,
Dynamic test circuit in Figure E)
5Ω
30Ω
55Ω
80Ω
105Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
due to diode recovery
6mJ
*) Eon and Ets include losses
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
4mJ
3mJ
E ts *
2mJ
E off
1mJ
0mJ
E on*
50°C
100°C
5mJ
4mJ
3mJ
2mJ
1mJ
Ets*
Eoff
Eon*
0mJ
400V
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=56Ω,
Dynamic test circuit in Figure E)
500V
600V
700V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=15A, RG=56Ω,
Dynamic test circuit in Figure E)
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Power Semiconductors
800V
9
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
15V
240V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
Ciss
1nF
960V
10V
Coss
100pF
Crss
BDTIC
5V
0V
0nC
50nC
10pF
100nC
IC(sc), short circuit COLLECTOR CURRENT
15µs
10µs
5µs
0µs
12V
14V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC,
SHORT CIRCUIT WITHSTAND TIME
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=15 A)
0V
125A
100A
75A
50A
25A
0A
16V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
12V
14V
16V
VGE, GATE-EMITTETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
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Power Semiconductors
10
18V
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
0
D=0.5
R,(K/W)
0.121
0.372
0.381
0.226
0.2
0.1
-1
10 K/W
0.05
R1
0.02
0.01
τ, (s)
-1
1.73*10
-2
2.75*10
-3
2.57*10
-4
2.71*10
R2
C1= τ1/R 1
C2= τ2/R2
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
0
10 K/W
0 K/W
D=0.5
0.2
-1
0 K/W
τ, (s)
-2
4.097*10
-3
4.430*10
-4
3.764*10
-5
3.021*10
R,(K/W)
0.3069
0.5654
0.4218
0.00818
0.1
0.05
R1
0.02
R2
BDTIC
single pulse
0.01
single pulse
C1=τ1/R1
C2=τ2/R2
-2
10 K/W
10µs
100µs
1ms
10ms
-2
0 K/W
10µs
100ms
trr, REVERSE RECOVERY TIME
500ns
400ns
300ns
200ns
TJ=150°C
100ns
0ns
200A/µs
TJ=25°C
400A/µs
600A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
10ms
1µC
TJ=25°C
400A/µs
600A/µs
11
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
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Power Semiconductors
100ms
TJ=150°C
2µC
0µC
200A/µs
800A/µs
1ms
tP, PULSE WIDTH
Figure 24. Typical Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
Qrr, REVERSE RECOVERY CHARGE
tP, PULSE WIDTH
Figure 23. Typical IGBT transient thermal
resistance
(D = tp / T)
100µs
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
25A
TJ=25°C
20A
15A
10A
TJ=25°C
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
TJ=150°C
-600A/µs
-500A/µs
TJ=150°C
-400A/µs
-300A/µs
-200A/µs
Irr,
BDTIC
5A
0A
200A/µs
400A/µs
600A/µs
-100A/µs
-0A/µs
200A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
TJ=25°C
150°C
2,0V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
20A
10A
IF=15A
1,5V
8A
5A
2,5A
1,0V
0,5V
0A
0V
1V
0,0V
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
-50°C
0°C
50°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage
as a function of junction temperature
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Power Semiconductors
12
100°C
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
PG-TO247-3
M
BDTIC
M
MAX
5.16
2.53
2.11
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
MIN
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
MIN
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
5.44
3
19.80
4.17
3.50
5.49
6.04
MAX
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
Z8B00003327
0
5 5
0
7.5mm
0.214
3
0.780
0.164
0.138
0.216
0.238
20.31
4.47
3.70
6.00
6.30
0.799
0.176
0.146
0.236
0.248
17-12-2007
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Power Semiconductors
13
03
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
BDTIC
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
a nd Stray capacity C σ =39pF.
Figure B. Definition of switching losses
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Power Semiconductors
14
Rev. 2.3 Sep 08
IHW15T120
Soft Switching Series
Published by
Infineon Technologies AG
81726 Munich, Germany
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All Rights Reserved.
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BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Power Semiconductors
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Rev. 2.3 Sep 08