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Transcript 
InductionHeatingSeries
ReverseconductingIGBTwithmonolithicbodydiode
BDTIC
IHW15N120R3
Datasheet
IndustrialPowerControl
www.BDTIC.com/infineon
IHW15N120R3
InductionHeatingSeries
ReverseconductingIGBTwithmonolithicbodydiode
Features:
C
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
BDTIC
Applications:
G
•Inductivecooking
C
E
KeyPerformanceandPackageParameters
Type
IHW15N120R3
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
1200V
15A
1.48V
175°C
H15R1203
PG-TO247-3
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2
Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
BDTIC
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
Maximumratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
30.0
15.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
45.0
A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C
-
45.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
30.0
15.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
45.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±25
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
254.0
127.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+175
°C
BDTIC
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.59
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
0.59
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
1200
-
-
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.48
1.70
1.80
1.70
-
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.55
1.70
1.80
1.75
6.4
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
V
V
V
BDTIC
Gate-emitter threshold voltage
VGE(th)
IC=0.40mA,VCE=VGE
5.1
5.8
Zero gate voltage collector current
ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=15.0A
-
13.9
-
S
Integrated gate resistor
rG
V
100.0 µA
2500.0
Ω
none
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1165
-
-
40
-
-
32
-
-
165.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=960V,IC=15.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
300
-
ns
-
46
-
ns
-
0.70
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
td(off)
Fall time
tf
Turn-off energy
Eoff
Tvj=25°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=180nH,
Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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IHW15N120R3
InductionHeatingSeries
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
370
-
ns
-
90
-
ns
-
1.25
-
mJ
IGBTCharacteristic,atTvj=175°C
Turn-off delay time
td(off)
Fall time
tf
Turn-off energy
Eoff
Tvj=175°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=180nH,
Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
BDTIC
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
50
100
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
40
TC=80°
30
TC=110°
tp=1µs
10
20µs
50µs
200µs
BDTIC
20
1ms
10ms
1
DC
10
0
1
10
100
0.1
1000
1
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
f,SWITCHINGFREQUENCY[kHz]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=14,6Ω)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
300
40
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
250
200
150
100
30
20
10
50
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
45
VGE=20V
VGE=20V
17V
17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
45
15V
30
13V
11V
9V
7V
15V
30
13V
11V
9V
7V
BDTIC
5V
15
0
0
1
2
5V
15
0
3
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
3
4
3.0
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=175°C
IC,COLLECTORCURRENT[A]
2
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
45
30
15
0
1
VCE,COLLECTOR-EMITTERVOLTAGE[V]
2
4
6
8
10
IC=7.5A
IC=15A
IC=30A
2.5
2.0
1.5
1.0
12
VGE,GATE-EMITTERVOLTAGE[V]
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
1000
1000
td(off)
tf
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
100
100
BDTIC
10
0
5
10
15
20
25
10
30
10
20
IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
50
7
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(off)
tf
t,SWITCHINGTIMES[ns]
40
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=15A,testcircuitinFig.E)
1000
100
10
30
rG,GATERESISTOR[Ω]
25
50
75
100
125
150
min.
typ.
max.
6
5
4
3
2
175
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=15A,
rG=14,6Ω,testcircuitinFig.E)
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.4mA)
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
2.5
1.6
Eoff
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
2.0
1.5
1.5
1.4
1.3
BDTIC
1.0
0.5
0.0
0
5
10
15
20
25
1.2
1.1
1.0
30
10
20
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
50
2.0
Eoff
Eoff
1.8
E,SWITCHINGENERGYLOSSES[mJ]
1.2
E,SWITCHINGENERGYLOSSES[mJ]
40
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=15A,testcircuitinFig.E)
1.3
1.1
1.0
0.9
0.8
0.7
0.6
30
rG,GATERESISTOR[Ω]
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
0.6
400
175
Tj,JUNCTIONTEMPERATURE[°C]
500
600
700
800
900
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=600V,VGE=15/0V,IC=15A,
rG=14,6Ω,testcircuitinFig.E)
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=15A,
rG=14,6Ω,testcircuitinFig.E)
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
1.4
16
Tj=25°C
Tj=175°C
240V
960V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
1.2
1.0
0.8
12
10
8
BDTIC
0.6
0.4
0.2
6
4
2
0.0
100
1000
0
1E+4
0
25
50
75
100
125
150
175
QGE,GATECHARGE[nC]
dv/dt,VOLTAGESLOPE[V/µs]
Figure 17. Typicalturnoffswitchingenergylossfor
softswitching
(indload,VCE=600V,VGE=15/0V,IC=15A,
RG=14,6Ω,testcircuitinFig.E)
Figure 18. Typicalgatecharge
(IC=15A)
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1
C,CAPACITANCE[pF]
1000
Ciss
Coss
Crss
100
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
7
6
5
4
3
2
1
i:
2.1E-4
0.01204762 1.9E-3
ri[K/W]: 4.6E-3 0.1431 0.2097 0.2185
2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402
τi[s]:
10
0
10
20
0.001
1E-6
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 19. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 20. IGBTtransientthermalimpedance
(D=tp/T)
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IHW15N120R3
InductionHeatingSeries
1
45
D=0.5
0.2
IF,FORWARDCURRENT[A]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
Tj=25°C
Tj=175°C
0.1
0.1
0.05
0.02
0.01
single pulse
30
BDTIC
0.01
15
7
6
5
4
3
2
1
i:
2.1E-4
1.9E-3
0.012
ri[K/W]: 4.6E-3 0.1431 0.2097 0.2185
2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402
τi[s]:
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
0
1
0
1
2
3
VF,FORWARDVOLTAGE[V]
tp,PULSEWIDTH[s]
Figure 22. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
Figure 21. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
2.5
VF,FORWARDVOLTAGE[V]
IC=7.5A
IC=15A
IC=30A
2.0
1.5
1.0
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 23. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
PG-TO247-3
BDTIC
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
a
a
b
b
BDTIC
t
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Rev.2.3,2013-02-12
IHW15N120R3
InductionHeatingSeries
RevisionHistory
IHW15N120R3
Revision:2013-02-12,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2009-04-01
-
2.1
2009-05-27
-
2.2
2011-04-05
Pack. draw. rev. 05, marking update
2.3
2013-02-12
Layout change
BDTIC
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©2013InfineonTechnologiesAG
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
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and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
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