Download Bias Resistor Transistor LDTC115GET1G NPN Silicon Surface Mount Transistor

www.BDTIC.com/LRC
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
LDTC115GET1G
Applications
Inverter, Interface, Driver
•
3
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
1
BDTIC
2
SC-89
We declare that the material of product compliance with
RoHS requirements.
1
BASE
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltag
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
50
V
V
V
mA
Collector power dissipation
Junction temperature
Storage temperature
Pc
Tj
Tstg
Parameter
50
5
100
200
150
−55 to +150
3
COLLECTOR
R2
2
EMITTER
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
LDTC115GET1G
LDTC115GET3G
R1 (K)
R2 (K)
Shipping
L2
100
3000/Tape & Reel
L2
100
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltag
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT ∗
50
50
5
−
30
−
82
70
−
−
−
−
−
−
−
−
100
250
−
−
−
0.5
58
0.3
−
130
−
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=50µA
IC=1mA
IE=72µA
VCB=50V
VEB=4V
IC=5mA, IB=0.25mA
IC=5mA, VCE=5V
−
VCE=10V, IE=−5mA, f=100MHz
∗ Characteristics of built-in transistor
1/3
www.BDTIC.com/LRC
LESHAN RADIO COMPANY, LTD.
LDTC115GET1G
1k
OUTPUT CURRENT : lo
500
VCE=5V
Ta=100°C
200
Ta=25°C
100
Ta = −40°C
50
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
z Electrical characteristic curves
1
500m
lC/lB=20/1
200m
Ta=100°C
Ta=25°C
100m
50m
Ta=−40°C
20m
BDTIC
20
10
5
2
1
10µ
20µ
50µ 100µ 200µ 500µ 1m
2m
5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current transfer ratio vs.
collector current characteristics
10m
5m
2m
1m
10µ
20µ
50µ 100µ 200µ 500µ 1m
2m
5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage vs.
collector current characteristics
2/3
www.BDTIC.com/LRC
LESHAN RADIO COMPANY, LTD.
LDTC115GET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
BDTIC
3/3