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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
STD123S
TRANSISTOR (NPN)
SOT-23
FEATURES
z
Low saturation medium current application
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Extremely low collector saturation voltage
z
Suitable for low voltage large current drivers
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High DC current gain and large current capability
z
Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
1. BASE
2. EMITTER
3. COLLECTOR
BDTIC
Marking:123
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
6.5
V
IC
Collector Current -Continuous
1
A
Collector Power Dissipation
350
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V (BR) CBO
IC=50μA, IE=0
20
V
Collector-emitter breakdown voltage
V (BR) CEO
IC =1mA, IB=0
15
V
Emitter-base breakdown voltage
V (BR) EBO
IE= 50μA, IC=0
6.5
V
Collector cut-off current
ICBO
VCB= 20 V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 6V, IC=0
0.1
μA
DC current gain
hFE
VCE=1V, IC= 100mA
0.3
V
Collector-emitter saturation voltage
Transition frequency
VCE (sat)
fT
Collector output capacitance
Cob
On resistance
RON
Min
Typ
Unit
150
IC=500mA, IB= 50mA
VCE=5V,
Max
IC=50mA
VCB=10V, IE=0, f=1MHz
f=1KHz,IB=1mA,
VIN=0.3V
www.BDTIC.com/jcst
260
MHz
5
pF
0.6
Ω
Typical Characteristics
Static Characteristic
400
COMMON
EMITTER
Ta=25℃
hFE
640uA
560uA
480uA
200
IC
——
Ta=100℃
DC CURRENT GAIN
(mA)
720uA
IC
COLLECTOR CURRENT
hFE
1000
800uA
300
STD123S
400uA
320uA
Ta=25℃
100
240uA
100
160uA
COMMON EMITTER
VCE=1V
IB=80uA
0
10
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VCEsat ——
1000
VCE
5
1
10
100
COLLECTOR CURRENT
(V)
VBEsat ——
IC
1200
1000
IC
(mA)
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
100
Ta=100℃
Ta=25℃
10
1
1
10
100
COLLECTOR CURRENT
100
Cob / Cib
——
IC
800
Ta=25℃
600
Ta=100℃
400
200
0.1
1000
1
VCB / VEB
PC
400
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25℃
C
(pF)
Cib
10
100
COLLECTOR CURRENT
(mA)
f=1MHz
IE=0 / IC=0
CAPACITANCE
1000
10
Cob
——
IC
1000
(mA)
Ta
350
300
250
200
150
100
50
1
0.1
1
10
REVERSE VOLTAGE
V
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
Ta
125
(℃ )
150
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