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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
SS8550
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
PC : 1 W (Ta=25 ℃)
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100uA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-0.1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-0.1
μA
Emitter cut-off current
ICEO
VCE=-20V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
uA
hFE(1)
VCE=-1V, IC=-100mA
85
hFE(2)
VCE=-1V, IC=-800mA
40
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=-800mA, IB=-80mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-800mA, IB=-80mA
-1.2
V
Base-emitter voltage
VBE(on)
VCE=-1V, IC=-10mA
-1
V
VCB=-10V, IE=0mA,f=1MHZ
20
pF
Out capacitance
Cob
Transition frequency
fT
VCE=-10V, IC=-50mA,f=30MHZ
100
MHz
CLASSIFICATION OF hFE(2)
Rank
Range
B
C
D
D3
85-160
120-200
160-300
300-400
B,Sep,2011
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
COMMON
EMITTER
Ta=25℃
-200
——
IC
-1.0mA
-0.9mA
Ta=100℃
300
hFE
-0.8mA
-0.7mA
-150
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
1000
IC
(mA)
-250
SS8550
-0.6mA
-0.5mA
-100
-0.4mA
-0.3mA
-0.2mA
-50
Ta=25℃
100
30
COMMON EMITTER
VCE=-1V
IB=-0.1mA
-0
10
-0
-1
-2
-3
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
VCE
-3
-1
-10
(V)
-100
-30
COLLECTOR CURRENT
IC
VBEsat
-1.2
——
-1000-1500
-300
IC
(mA)
IC
BDTIC
β=10
-300
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
-100
-30
Ta=100℃
Ta=25℃
-10
-10
-3
-100
-30
COLLECTOR CURRENT
IC
-1500
——
IC
-300
-0.4
-1000-1500
-1
-10
-3
(mA)
-100
-30
COLLECTOR CURRENT
VBE
Cob/ Cib
100
——
-1000-1500
-300
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
Ta=25℃
(pF)
-300
Ta=25℃
Cib
C
-100
CAPACITANCE
(mA)
IC
Ta=100℃
-0.6
COMMON EMITTER
VCE=-1V
-1000
COLLECTOR CURRENT
Ta=25℃
-0.2
-1
-30
Ta=100℃
-10
30
Cob
-3
-1
-0.2
-0.4
-0.6
-0.8
BASE-EMITTER VOLTAGE
fT
1000
——
VBE
IC
COLLECTOR POWER DISSIPATION
PC (W)
fT
100
30
-6
PC
1.2
-10
-3
REVERSE BIAS VOLTAGE
Ta=25℃
-2
-1
-0.3
(V)
300
10
10
-0.1
-1.0
COMMON EMITTER
VCE= -10V
(MHz)
-0.8
-3
-1
TRANSITION FREQUENCY
-1.0
——
V
-20
(V)
Ta
1.0
0.8
0.6
0.4
0.2
0.0
-10
www.BDTIC.com/jcst
COLLECTOR CURRENT
-30
IC
(mA)
-100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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