Download TO-92S Plastic-Encapsulate Transistors STC128

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
STC128
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z General Purpose Switching Application
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
6.5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
400
mW
Thermal Resistance From Junction To Ambient
312
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=0.05mA,IE=0
20
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
15
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.05mA,IC=0
6.5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
DC current gain
hFE
VCE=1V, IC=100mA
VCE(sat)
IC=500mA,IB=50mA
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Cob
fT
0.1
μA
0.1
μA
0.3
V
150
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=50mA
5
pF
260
MHz
A,Dec,2010
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