Download TO-92 Plastic-Encapsulate Transistors STBV32/B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
STBV32/B
Plastic-Encapsulate Transistors
TO – 92
TRANSISTER (NPN)
FEATURES
z Medium Voltage Capability
z Low Spread of Dynamic Parameters
z Minimum Lot-to-lot Spread for Reliable Operation
z Very High Switching Speed
1.EMITTER
2.COLLECTOR
3.BASE
APPLICATIONS
z
Electronic Ballasts for Fluorescent Lighting
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
1.1
W
Thermal Resistance From Junction To Ambient
114
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
V(BR)CBO
*
IC=1mA, IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
*
IC=10mA, IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10mA, IC=0
9
V
Collector-base breakdown voltage
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VBE=-1.5V, VCE=700V
VEB=7V, IC=0
hFE(1)
*
hFE(2)
*
1
mA
100
μA
VCE=2V, IC=0.5A
8
35
VCE=2V, IC=1A
5
25
VCE(sat)(1)
*
IC=0.5A, IB=0.1A
0.5
V
VCE(sat)(2)
*
IC=1 A, IB=0.25A
1
V
VCE(sat)(3)
*
IC=1.5A, IB=0.5A
1.5
V
VBE (sat)(1)
*
IC=0.5A, IB=0.1A
1
V
VBE (sat)(2)
*
IC=1A, IB=0.25A
1.2
V
*Pulse test: pulse width ≤300μs, duty cycle≤ 1.5%.
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Typical Characteristics
STBV32/B
Static Characteristic
700
24mA
hFE
21mA
DC CURRENT GAIN
IC
400
18mA
15mA
300
12mA
9mA
200
IC
Ta=100℃
27mA
500
——
COMMON EMITTER
VCE= 2V
30mA
(mA)
600
COLLECTOR CURRENT
hFE
100
COMMON
EMITTER
Ta=25℃
Ta=25℃
10
6mA
100
IB=3mA
0
1
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
5
1
10
100
COLLECTOR CURRENT
VCE (V)
VCEsat
Ic
1000
IC
——
(mA)
IC
1000
BDTIC
β=4,Ta=25℃
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
600
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=5,Ta=25℃
800
β=5,Ta=100℃
β=4,Ta=100℃
400
β=5,Ta=100℃
β=4,Ta=100℃
β=3,Ta=100℃
100
β=5,Ta=25℃
β=4,Ta=25℃
β=3,Ta=25℃
10
1
10
100
COLLECTOR CURREMT
IC
1000
(MHz)
——
1000
IC
(mA)
IC
COMMON EMITTER
VCE=10V
Ta=25℃
8
TRANSITION FREQUENCY
10
T =2
5℃
a
T =1
00℃
a
fT
IC
100
1
0.1
0
200
400
600
800
6
4
2
0
20
1000
40
BASE-EMMITER VOLTAGE VBE (V)
Cob/Cib
——
VCB/VEB
80
PC
——
IC
100
120
(mA)
Ta
1200
COLLECTOR POWER DISSIPATION
PC (mW)
f=1MHz
IC=0/IE=0
Cib
(pF)
Ta=25 ℃
CT
100
Cob
10
1
0.1
60
COLLECTOR CURRENT
1000
CAPACITANCE
100
fT
10
COMMON EMITTER
VCE=2V
(mA)
10
COLLECTOR CURRENT
IC — — VBE
1000
COLLECTOR CURRENT
1
(mA)
1
1000
800
600
400
200
0
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COLLECTOR-BASE VOLTAGE
10
VCB/VEB
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150