Download SOT-23 Plastic-Encapsulate Transistors SS8550

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550
TRANSISTOR (PNP)
SOT–23
FEATURES
 High Collector Current
 Complementary to SS8050
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
1. BASE
2. EMITTER
3. COLLECTOR
BDTIC
IC
Collector Current
-1.5
A
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
417
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-0.1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-100
nA
Collector cut-off current
ICEO
VCE=-20V, IB=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-100
nA
hFE(1)
VCE=-1V, IC=-100mA
120
hFE(2)
VCE=-1V, IC=-800mA
40
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=-800mA, IB=-80mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-800mA, IB=-80mA
-1.2
V
-1
V
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
VCE=-1V, IC=-10mA
VCE=-10V,IC=-50mA , f=30MHz
VCB=-10V, IE=0, f=1MHz
100
MHz
20
pF
CLASSIFICATION OF hFE(1)
RANK
L
H
J
RANGE
120–200
200–350
300–400
MARKING
Y2
A,Apr,2011
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Typical Characterisitics
SS8550
hFE
Static Characteristic
500
-180
—— IC
1mA
Ta=100℃
0.9mA
0.8mA
-120
0.7mA
-100
0.6mA
hFE
-140
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
-160
0.5mA
-80
0.4mA
-60
0.3mA
-40
Ta=25℃
100
0.2mA
-20
IB=0.1mA
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
COLLECTOR-EMITTER VOLTAGE
VBEsat
——
-4.0
VCE
-4.5
VCE=-1V
10
-0.1
-5.0
-1
(V)
-10
-100
COLLECTOR CURRENT
IC
VCEsat
-1000
-1000
IC
-1000
(mA)
IC
——
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-900
-800
Ta=25℃
-700
-600
Ta=100℃
-500
-400
-300
-100
Ta=100℃
Ta=25℃
-10
β=10
-200
-0.1
-1
-10
-100
COLLECTOR CURRENT
VBE
——
IC
β=10
-1
0.2
-1000
-1
-10
-100
COLLECTOR CURRENT
(mA)
IC
Cob/ Cib
-1000
IC
—— VCB/ VEB
100
f=1MHz
IE=0/ IC=0
(pF)
-100
o
Ta=25 C
Cob
C
o
Ta=100 C
Ta=25℃
CAPACITANCE
IC
(mA)
Cib
COLLCETOR CURRENT
-1000
(mA)
-10
-1
VCE=-1V
-0.1
-200
-300
-400
-500
-600
-700
BASE-EMMITER VOLTAGE
fT
-900
—— IC
Pc
COLLECTOR POWER DISSIPATION
Pc (mW)
VCE-10V
o
Ta=25 C
-1
-10
20
(V)
Ta
300
250
200
150
100
50
0
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-10
COLLECTOR CURRENT
——
V
350
100
10
-1
REVERSE VOLTAGE
(mV)
fT
TRANSITION FREQUENCY
1
-0.2
-1000
(MHz)
500
VBE
-800
-100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150