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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9014
TO-92
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z
High Total Power Dissipation.(PC=0.45W)
z
High hFE and Good Linearity
z
Complementary to S9015
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
0.45
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=50V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=35V, IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
DC current gain
hFE
VCE=5V, IC= 1mA
60
1000
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 5mA
1
V
fT
Transition frequency
CLASSIFICATION OF
Rank
Range
VCE=5V, IC= 10mA
150
f=30MHz
MHz
hFE(1)
A
B
C
D
60-150
100-300
200-600
400-1000
www.BDTIC.com/jcst
Typical Characterisitics
S9014
hFE
Static Characteristic
1000
8
12.6uA
5
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
16.2uA
14.4uA
6
IC
(mA)
o
Ta=100 C
18uA
7
—— IC
108uA
9uA
4
7.2uA
3
5.4uA
2
o
Ta=25 C
100
3.6uA
1
IB=1.8uA
0
VCE=5V
10
0
5
10
15
20
25
30
35
COLLECTOR-EMITTER VOLTAGE
VBEsat
1200
——
VCE
40
45
50
0.4
1
10
100
COLLECTOR CURRENT
(V)
IC
VCEsat
1000
IC
200
(mA)
IC
——
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
Ta=25℃
800
600
Ta=100℃
400
200
Ta=100℃
100
Ta=25℃
β=20
β=20
0
0.1
1
10
COLLECTOR CURRENT
VBE
——
1
(mA)
10
COLLECTOR CURRENT
IC
Cob/ Cib
50
IC
100
(mA)
—— VCB/ VEB
Cib
10
1000
Ta=25℃
CAPACITANCE
BASE-EMMITER VOLTAGE
C
VBE
(pF)
(mV)
5000
IC
10
0.1
100
Ta=100℃
o
Ta=25 C
VCE=5V
1
10
COLLCETOR CURRENT
fT
IC
0.1
0.1
100
1
(mA)
10
REVERSE VOLTAGE
—— IC
Pc
——
V
20
(V)
Ta
500
COLLECTOR POWER DISSIPATION
Pc (mW)
(MHz)
1000
fT
1
f=1MHz
IE=0/ IC=0
100
0.1
TRANSITION FREQUENCY
Cob
100
10
400
300
200
100
VCE=5V
o
Ta=25 C
1
0
1
www.BDTIC.com/jcst
COLLECTOR CURRENT
10
IC
(mA)
60
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃)
125
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