Download SOT-323 Plastic-Encapsulate Transistors SS8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SS8050
TRANSISTOR (NPN)
SOT-323
FEATURES
Complimentary to SS8550
1. BASE
2. EMITTER
MARKING: Y1
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
0.25
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
VCBO
Parameter
BDTIC
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCB=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB= 80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
fT
Transition frequency
Cob
Collector output capacitance
VCE=10V, IC= 50mA,
f=30MHz
100
VCB=10V,IE=0,f=1MHz
MHz
15
CLASSIFICATION OF hFE(1)
Rank
Range
L
H
J
120-200
200-350
300-400
www.BDTIC.com/jcst
pF
Typical Characterisitics
SS8050
Static Characteristic
COMMON
EMITTER
Ta=25℃
0.25
800uA
IC
——
Ta=100℃
700uA
IC
0.20
DC CURRENT GAIN
(A)
900uA
COLLECTOR CURRENT
hFE
1000
1000uA
hFE
0.30
600uA
0.15
500uA
0.10
400uA
Ta=25℃
100
300uA
0.05
200uA
IB=100uA
0.00
0.0
0.5
1.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
VCE
2.0
1
10
VBEsat
2000
1000 1500
100
COLLECTOR CURRENT
(V)
IC
——
VCE=1V
10
1.5
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
Ta=100℃
100
Ta=25℃
10
1000
Ta=25℃
Ta=100℃
β=10
β=10
1
100
1
10
COLLECTOR CURRENT
VBE
1500
1000 1500
100
IC
1
10
(mA)
100
COLLECTOR CURRENT
—— IC
Cob/ Cib
200
1000 1500
IC
(mA)
—— VCB/ VEB
f=1MHz
IE=0/IC=0
1000
100
Ta=25℃
(pF)
Ta=100℃
C
100
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
Cib
Ta=25℃
10
1
200
VCE=1V
300
400
500
600
700
BASE-EMMITER VOLTAGE
fT
——
900
1
(mV)
10
REVERSE VOLTAGE
IC
PC
300
COLLECTOR POWER DISSIPATION
PC (mW)
fT
TRANSITION FREQUENCY
10
1
0.1
1000
(MHz)
1000
VBE
800
Cob
100
10
——
V
20
(V)
Ta
250
200
150
100
50
VCE=10V
Ta=25℃
1
0
1
www.BDTIC.com/jcst
10
COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150