Download TO-92 Plastic-Encapsulate Transistors SS8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
Plastic-Encapsulate Transistors
TO-92
SS8050
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Power Dissipation
PCM : 1 W (TA=25.)
: 2 W (TC=25.)
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100uA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Emitter cut-off current
ICEO
VCE=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC=100mA
85
hFE(2)
VCE=1V, IC=800mA
40
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB=80mA
1.2
V
1
V
Base-emitter voltage
VBE
Transition frequency
fT
VCE=1V, IC=10mA
VCE=10V, IC=50mA,f=30MHZ
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
C
D
D3
85-160
120-200
160-300
300-400
www.BDTIC.com/jcst
Typical Characterisitics
Static Characteristic
140
hFE
300uA
250uA
200uA
40
300
Ta=25℃
DC CURRENT GAIN
(mA)
IC
COLLECTOR CURRENT
350uA
60
IC
Ta=100℃
400uA
80
——
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
450uA
100
hFE
1000
500uA
120
SS8050
150uA
100
30
100uA
20
IB=50uA
0
0.0
10
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
VCE
2.5
1
100
30
COLLECTOR CURRENT
IC
——
10
3
(V)
VBEsat
1.2
1000 1500
300
IC
(mA)
IC
——
100
Ta=100℃
30
1.0
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
Ta=25℃
10
Ta=25℃
0.8
Ta=100℃
0.6
0.4
3
β=10
β=10
1
0.2
1
10
3
100
30
COLLECTOR CURRENT
VBE
1500
1000
300
IC
1000 1500
1
30
10
3
(mA)
100
COLLECTOR CURRENT
—— IC
Cob/ Cib
1000
1000 1500
300
IC
(mA)
—— VCB/ VEB
f=1MHz
IE=0/IC=0
(pF)
Ta=100℃
Ta=25℃
10
0.4
0.6
0.8
BASE-EMMITER VOLTAGE
fT
Cob
10
——
1.0
VBE
1
0.1
1.2
3
1
0.3
(V)
REVERSE VOLTAGE
IC
PC
1200
——
V
10
20
(V)
Ta
1000
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
1000
fT
Cib
COMMON EMITTER
VCE=1V
1
0.2
TRANSITION FREQUENCY
100
C
100
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
Ta=25℃
300
100
30
10
3
800
600
400
200
VCE=10V
Ta=25℃
1
2
0
10
www.BDTIC.com/jcst
COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150