Download SOT-23 Plastic-Encapsulate Transistors SS8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SS8050
SOT-23
TRANSISTOR (NPN)
1. BASE
FEATURES
Complimentary to SS8550
2. EMITTER
3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCB=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
400
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB= 80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
fT
Transition frequency
VCE=10V, IC= 50mA
f=30MHz
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
H
J
120-200
200-350
300-400
www.BDTIC.com/jcst
B,Jan,2012
Typical Characterisitics
Static Characteristic
140
hFE
DC CURRENT GAIN
(mA)
IC
COLLECTOR CURRENT
350uA
300uA
250uA
60
200uA
40
IC
Ta=100℃
400uA
80
——
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
450uA
100
hFE
1000
500uA
120
SS8050
150uA
300
Ta=25℃
100
30
100uA
20
IB=50uA
0
0.0
10
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
VCE
2.5
1
100
30
COLLECTOR CURRENT
IC
——
10
3
(V)
VBEsat
1.2
1000 1500
300
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
Ta=100℃
100
Ta=25℃
30
10
1.0
Ta=25℃
0.8
Ta=100℃
0.6
0.4
3
β=10
β=10
1
0.2
1
10
3
100
30
COLLECTOR CURRENT
VBE
1500
1000
300
IC
1000 1500
1
30
10
3
(mA)
100
COLLECTOR CURRENT
—— IC
Cob/ Cib
200
IC
(mA)
—— VCB/ VEB
f=1MHz
IE=0/IC=0
100
(pF)
(mA)
C
30
Ta=25℃
10
Cob
10
COMMON EMITTER
VCE=1V
0.4
0.6
fT
0.8
——
1.0
VBE
1
0.1
1.2
REVERSE VOLTAGE
IC
PC
350
300
100
30
10
3
3
1
0.3
(V)
COLLECTOR POWER DISSIPATION
PC (mW)
1000
(MHz)
30
3
3
BASE-EMMITER VOLTAGE
fT
CAPACITANCE
IC
COLLCETOR CURRENT
Ta=100℃
100
1
0.2
TRANSITION FREQUENCY
Ta=25℃
Cib
300
1000 1500
300
VCE=10V
——
V
10
20
(V)
Ta
300
250
200
150
100
50
Ta=25℃
1
1
3
0
www.BDTIC.com/jcst
30
10
COLLECTOR CURRENT
IC
(mA)
100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Jan,2012