Download TO-92 Plastic-Encapsulate Transistors S9018

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
S9018
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z High Current Gain Bandwidth Product
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
50
mA
PC
Collector Power Dissipation
0.4
W
312.5
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
Thermal Resistance From Junction To Ambient
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
25
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA,IB=0
18
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
nA
Collector cut-off current
ICEO
VCE=15V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
0.1
μA
DC current gain
hFE
VCE=5V, IC=1mA
Collector-emitter saturation voltage
VCE(sat)
IC=10mA,IB=1mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=10mA,IB=1mA
1.42
V
fT
Transition frequency
28
270
800
VCE=5V,IC=50mA,f=400MHz
MHz
CLASSIFICATION OF hFE
RANK
D
E
F
G
H
I
J
RANGE
28-45
39-60
54-80
72-108
97-146
132-198
180-270
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
10
(mA)
COMMON EMITTER
VCE=5V
COMMON
EMITTER
Ta=25℃
90uA
8
hFE
IC
80uA
DC CURRENT GAIN
70uA
COLLECTOR CURRENT
hFE —— IC
160
100uA
60uA
6
S9018
50uA
40uA
4
30uA
Ta=100℃
120
Ta=25℃
80
40
20uA
2
IB=10uA
0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCE
10
1
VCEsat ——
VBEsat —— IC
1.0
50
10
COLLECTOR CURRENT
(V)
IC
(mA)
IC
0.3
BDTIC
Ta=25℃
0.8
Ta=100℃
0.6
0.4
0.1
1
——
Ta=25℃
1
VBE
50
10
COLLECTOR CURRENT
Cob / Cib
10
——
IC
(mA)
VCB / VEB
COMMON EMITTER
VCE=5V
f=1MHz
IE=0 / IC=0
Ta=25℃
Ta=100℃
Cib
CAPACITANCE
C
(pF)
10
Ta=25℃
1
0.1
0.2
0.6
fT
1200
Cob
1
0.1
0.4
0.8
1.0
BASE-EMITTER VOLTAGE
——
1.2
1
10
REVERSE VOLTAGE
VBE(V)
IC
PC
0.5
1000
fT
TRANSITION FREQUENCY
Ta=100℃
0.1
(mA)
COLLECTOR POWER DISSIPATION
PC (W)
COLLECTOR CURRENT
IC (mA)
IC
IC
β=10
0.01
50
10
COLLECTOR CURRENT
(MHz)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
800
600
400
VCE=5V
——
V
20
(V)
Ta
0.4
0.3
0.2
0.1
Ta=25℃
200
0.0
1
3
www.BDTIC.com/jcst
COLLECTOR CURRENT
10
IC
(mA)
20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150