Download SOT-23 Plastic-Encapsulate Transistors S9013

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9013
TRANSISTOR (NPN)
SOT–23
FEATURES
z High Collector Current.
z Complementary to S9012.
z Excellent hFE Linearity.
1. BASE
MARKING: J3
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. COLLECTOR
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
416
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
=
IC=0.1mA, IE 0
V(BR)CBO
40
V
Collector-emitter breakdown voltage
=
IC=1mA, IB 0
V(BR)CEO
25
V
Emitter-base breakdown voltage
=
IE=0.1mA, IC 0
V(BR)EBO
5
V
Collector cut-off current
Collector cut-off current
=
VCB=40V, IE 0
ICBO
0.1
uA
=
VCE=20V, IB 0
ICEO
0.1
uA
0.1
uA
=
VEB=5V, IC 0
IEBO
Emitter cut-off current
DC current gain
hFE(1)
VCE=1V,
=
IC 50mA
120
hFE(2)
VCE
=
=1V, IC 500mA
40
400
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,
=
IB 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,
=
IB 50mA
1.2
V
VCB=1V,IC= 10mA,
0.7
V
Base-emitter voltage
VBE
Transition frequency
fT
Cob
Collector output capacitance
VCE=6V,IC=20mA, f=30MHz
VCB=6V, IE=0, f=1MHz
150
MHz
8
pF
CLASSIFICATION OF hFE(1)
RANK
L
H
J
RANGE
120-200
200-350
300-400
B,Nov,2011
www.BDTIC.com/jcst
Typical Characterisitics
Static Characteristic
100
hFE
DC CURRENT GAIN
(mA)
IC
Ta=100℃
300uA
60
——
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
350uA
IC
COLLECTOR CURRENT
hFE
1000
400uA
80
S9013
250uA
200uA
40
150uA
Ta=25℃
100
100uA
20
IB=50uA
10
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
500
——
VCE
20
1
3
30
10
IC
VBEsat
1.2
500
100
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
300
100
Ta=100℃
Ta=25℃
30
Ta=25℃
0.8
Ta=100℃
0.4
β=10
β=10
10
1
3
30
10
COLLECTOR CURRENT
1
3
30
10
(mA)
100
COLLECTOR CURRENT
—— VBE
IC
100
IC
0.0
500
100
Cob/ Cib
100
——
IC
VCB/ VEB
f=1MHz
IE=0/ IC=0
30
Ta=25℃
Cib
30
C
(pF)
Ta=100℃
10
CAPACITANCE
IC
(mA)
COMMON EMITTER
VCE=1V
COLLECTOR CURRENT
500
(mA)
3
Ta=25℃
1
Cob
10
3
0.3
0.1
0.0
0.2
0.4
0.6
0.8
1
0.1
1.0
fT
1000
1
0.3
—— IC
PC ——
400
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
V
20
(V)
Ta
VCE=6V
COLLECTOR POWER DISSIPATION
PC (mW)
TRANSITION FREQUENCY
fT
(MHz)
Ta=25℃
300
100
10
10
300
200
100
0
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100
30
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150