Download TO-92 Plastic-Encapsulate Transistors S9013

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
TO-92
FEATURES
z Complementary to S9012
z Excellent hFE linearity
1. EMITTER
2. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. COLLECTOR
Symbol
Parameter
Value
Units
BDTIC
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA , IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA , IC=0
5
V
Collector cut-off current
ICBO
VCB= 40V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V , IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC=50mA
64
hFE(2)
VCE=1V, IC= 500mA
40
400
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB= 50mA
0.6
V
Base-emitter voltage
VBE(sat)
IC= 500mA, IB= 50mA
1.2
V
Transition frequency
fT
VCE=6V,IC=20mA,f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
D
E
F
G
H
I
J
Range
64-91
78-112
96-135
112-166
144-202
190-300
300-400
www.BDTIC.com/jcst
B,Nov,2011
Typical Characterisitics
S9013
Static Characteristic
IC
COMMON EMITTER
VCE=1V
hFE
420uA
60
DC CURRENT GAIN
360uA
IC
(mA)
80
——
COMMON
EMITTER
Ta=25℃
480uA
COLLECTOR CURRENT
hFE
1000
100
300uA
240uA
40
180uA
Ta=100℃
Ta=25℃
100
120uA
20
IB=60uA
10
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
500
——
VCE
20
3
1
30
10
IC
VBEsat
2000
500
100
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
100
Ta=100℃
Ta=25℃
30
1000
Ta=25℃
Ta=100℃
β=10
β=10
10
1
3
30
10
COLLECTOR CURRENT
IC
100
IC
1
—— VBE
(mA)
—— IC
Ta=25℃
3
Ta=25℃
1
0.3
300
100
10
0.4
0.6
0.8
1.0
2
Cob/ Cib
—— VCB/ VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25℃
C
(pF)
30
Cob
10
PC ——
700
f=1MHz
IE=0/ IC=0
Cib
30
10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
CAPACITANCE
IC
(MHz)
fT
Ta=100℃
100
500
100
VCE=6V
TRANSITION FREQUENCY
IC
COLLECTOR CURRENT
fT
1000
10
0.2
30
10
COLLECTOR CURRENT
30
0.1
0.0
3
(mA)
COMMON EMITTER
VCE=1V
(mA)
100
500
100
3
IC
100
(mA)
Ta
600
500
400
300
200
100
1
0.1
0.3
1
0
www.BDTIC.com/jcst
REVERSE VOLTAGE
3
V
10
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Nov,2011