Download SOT-23 Plastic-Encapsulate Transistors S9012

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9012
TRANSISTOR (PNP)
SOT–23
FEATURES
z
z
z
High Collector Current
Complementary To S9013
Excellent hFE Linearity
1. BASE
2. EMITTER
MARKING: 2T1
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-500
mA
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
416
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC=-0.1mA, IE=0
conditions
Min
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-0.1
uA
Collector cut-off current
ICEO
VCE=-20V, IB=0
-0.1
uA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
uA
DC current gain
hFE
VCE=-1V, IC=-50mA
120
Typ
Max
Unit
400
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB=-50mA
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCE=-6V,IC=-20mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
150
MHz
5
pF
CLASSIFICATION OF hFE
RANK
L
H
J
RANGE
120-200
200-350
300-400
B,Nov,2011
www.BDTIC.com/jcst
Typical Characterisitics
Static Characteristic
-100
(mA)
-350uA
IC
IC
Ta=100℃
hFE
DC CURRENT GAIN
-250uA
-60
——
COMMON EMITTER
VCE=-1V
COMMON
EMITTER
Ta=25℃
-300uA
COLLECTOR CURRENT
hFE
400
-400uA
-80
S9012
-200uA
-150uA
-40
-100uA
300
Ta=25℃
200
100
-20
IB=-50uA
0
-0
-0
-4
-8
-12
-16
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
VCE
-1
-20
-10
IC
VBEsat
-1.2
-500
-100
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
Ta=100℃
-100
Ta=25℃
-10
Ta=25℃
-0.8
Ta=100℃
-0.4
β=10
-1
-1
-10
COLLECTOR CURRENT
fT
500
IC
-1
(mA)
-10
-100
COLLECTOR CURRENT
—— IC
100
Cob/ Cib
——
IC
(MHz)
-500
(mA)
VCB/ VEB
f=1MHz
IE=0/ IC=0
VCE=-6V
o
Ta=25 C
Ta=25℃
Cob
CAPACITANCE
C
TRANSITION FREQUENCY
(pF)
fT
Cib
100
-5
-10
-100
COLLECTOR CURRENT
Pc
400
COLLECTOR POWER DISSIPATION
Pc (mW)
β=10
-0.0
-500
-100
——
IC
(mA)
10
1
-0.1
-1
REVERSE VOLTAGE
Ta
300
200
100
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150
-10
V
(V)
-20