Download TO-92 Plastic-Encapsulate Transistors S8050

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Document related concepts
no text concepts found
Transcript
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S8050
TO-92
TRANSISTOR (NPN)
FEATURES
z
Complimentary to S8550
z
Collector current: IC=0.5A
1.EMITTER
2.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
3.COLLECTOR
BDTIC
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
5
V
0.5
A
PC
Collector Power Dissipation
0.625
W
TJ
Junction Temperature
150
Tstg
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA,
IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA,
IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA,
IC=0
5
V
Collector cut-off current
ICBO
VCB= 40 V ,
IE=0
0.1
μA
Collector cut-off current
ICEO
VCE= 20 V ,
IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V,
IC=0
0.1
μA
hFE(1)
VCE= 1V,
IC= 50mA
85
hFE(2)
VCE= 1V,
IC= 500mA
50
400
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50mA
1.2
V
CLASSIFICATION OF
Rank
Range
VCE= 6V, IC=20mA
fT
Transition frequency
150
f =30MHz
MHz
hFE(1)
B
C
D
D3
85-160
120-200
160-300
300-400
www.BDTIC.com/jcst
Typical Characterisitics
S8050
Static Characteristic
IC
COMMON EMITTER
VCE=1V
hFE
420uA
60
DC CURRENT GAIN
360uA
IC
(mA)
80
——
COMMON
EMITTER
Ta=25℃
480uA
COLLECTOR CURRENT
hFE
1000
100
300uA
240uA
40
180uA
Ta=100℃
Ta=25℃
100
120uA
20
IB=60uA
10
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
500
——
VCE
20
3
1
30
10
IC
VBEsat
2000
500
100
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
100
Ta=100℃
Ta=25℃
30
1000
Ta=25℃
Ta=100℃
β=10
β=10
10
1
3
30
10
COLLECTOR CURRENT
IC
100
IC
1
—— VBE
Ta=100℃
3
Ta=25℃
1
0.3
0.4
0.6
0.8
Cob/ Cib
100
2
COLLECTOR POWER DISSIPATION
PC (mW)
CAPACITANCE
C
(pF)
30
Cob
10
3
1
PC ——
750
Ta=25℃
Cib
3
V
10
(V)
20
IC
100
(mA)
Ta
625
500
375
250
125
0
www.BDTIC.com/jcst
REVERSE VOLTAGE
30
10
COLLECTOR CURRENT
f=1MHz
IE=0/ IC=0
0.3
—— IC
Ta=25℃
1.0
—— VCB/ VEB
500
(mA)
300
BASE-EMMITER VOLTAGE VBE (V)
1
0.1
IC
COMMON EMITTER
VCE=6V
10
100
100
(MHz)
fT
TRANSITION FREQUENCY
IC
COLLECTOR CURRENT
fT
1000
10
0.2
30
10
COLLECTOR CURRENT
30
0.1
0.0
3
(mA)
COMMON EMITTER
VCE=1V
(mA)
100
500
100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
Related documents