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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR (NPN) FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V 3.COLLECTOR BDTIC VEBO Emitter-Base Voltage IC Collector Current -Continuous 5 V 0.5 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 Tstg ℃ Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 50mA 85 hFE(2) VCE= 1V, IC= 500mA 50 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V CLASSIFICATION OF Rank Range VCE= 6V, IC=20mA fT Transition frequency 150 f =30MHz MHz hFE(1) B C D D3 85-160 120-200 160-300 300-400 www.BDTIC.com/jcst Typical Characterisitics S8050 Static Characteristic IC COMMON EMITTER VCE=1V hFE 420uA 60 DC CURRENT GAIN 360uA IC (mA) 80 —— COMMON EMITTER Ta=25℃ 480uA COLLECTOR CURRENT hFE 1000 100 300uA 240uA 40 180uA Ta=100℃ Ta=25℃ 100 120uA 20 IB=60uA 10 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 20 3 1 30 10 IC VBEsat 2000 500 100 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BDTIC 300 100 Ta=100℃ Ta=25℃ 30 1000 Ta=25℃ Ta=100℃ β=10 β=10 10 1 3 30 10 COLLECTOR CURRENT IC 100 IC 1 —— VBE Ta=100℃ 3 Ta=25℃ 1 0.3 0.4 0.6 0.8 Cob/ Cib 100 2 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) 30 Cob 10 3 1 PC —— 750 Ta=25℃ Cib 3 V 10 (V) 20 IC 100 (mA) Ta 625 500 375 250 125 0 www.BDTIC.com/jcst REVERSE VOLTAGE 30 10 COLLECTOR CURRENT f=1MHz IE=0/ IC=0 0.3 —— IC Ta=25℃ 1.0 —— VCB/ VEB 500 (mA) 300 BASE-EMMITER VOLTAGE VBE (V) 1 0.1 IC COMMON EMITTER VCE=6V 10 100 100 (MHz) fT TRANSITION FREQUENCY IC COLLECTOR CURRENT fT 1000 10 0.2 30 10 COLLECTOR CURRENT 30 0.1 0.0 3 (mA) COMMON EMITTER VCE=1V (mA) 100 500 100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150