Download SOT-23 Plastic-Encapsulate Transistors S8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S8050
SOT-23
TRANSISTOR (NPN)
FEATURES
z
Complimentary to S8550
z
Collector Current: IC=0.5A
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: J3Y
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Dissipation
0.3
W
RΘJA
Thermal Resistance from Junction to Ambient
417
℃/W
Tj
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
40
V
IC=1mA, IB 0
V(BR)CEO =
25
V
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
V=
CB=40 V , IE 0
0.1
μA
Collector cut-off current
ICEO
=
VCB= 20V , I E 0
0.1
μA
Emitter cut-off current
IEBO
=
VEB= 5V , IC 0
0.1
μA
hFE(1)
VCE= 1V, I C= 50mA
120
hFE(2)
VCE= 1V, I C= 500mA
50
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
IC= 100μA, IE=0
400
Collector-emitter saturation voltage
VCE(sat)
I=500 mA, IB= 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500 mA, IB= 50mA
1.2
V
fT
Transition frequency
VCE= 6V, I C= 20mA
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
H
J
120-200
200-350
300-400
www.BDTIC.com/jcst
Typical Characterisitics
Static Characteristic
100
hFE
DC CURRENT GAIN
(mA)
IC
Ta=100℃
300uA
60
——
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
350uA
IC
COLLECTOR CURRENT
hFE
1000
400uA
80
S8050
250uA
200uA
40
150uA
Ta=25℃
100
100uA
20
IB=50uA
10
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
500
——
VCE
20
1
3
30
10
IC
VBEsat
1.2
500
100
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
300
100
Ta=100℃
Ta=25℃
30
Ta=25℃
0.8
Ta=100℃
0.4
β=10
β=10
10
1
3
30
10
COLLECTOR CURRENT
IC
500
IC
0.0
500
100
1
3
30
10
(mA)
100
COLLECTOR CURRENT
—— VBE
Cob/ Cib
100
——
IC
VCB/ VEB
f=1MHz
IE=0/ IC=0
100
Ta=25℃
Cib
(pF)
30
30
C
Ta=25℃
10
CAPACITANCE
IC
(mA)
COMMON EMITTER
VCE=1V
COLLECTOR CURRENT
500
(mA)
Ta=100℃
3
1
Cob
10
3
0.3
0.1
0.2
0.4
0.6
0.8
1
0.1
1.0
fT
1000
—— IC
PC ——
400
10
3
REVERSE VOLTAGE
V
20
(V)
Ta
VCE=6V
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
fT
TRANSITION FREQUENCY
1
0.3
BASE-EMMITER VOLTAGE VBE (V)
100
10
10
300
200
100
0
www.BDTIC.com/jcst
100
30
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150