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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPSL51
TRANSISTOR (PNP)
TO – 92
1.EMITTER
FEATURES
z General Purpose Amplifier
2.BASE
3.COLLECTOR
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-4
V
mA
IC
Collector Current
200
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Test
conditions
Min
Typ
Max
Unit
IC= -0.1mA,IE=0
-100
V
IC=-1mA,IB=0
-100
V
-4
V
IE=-0.01mA,IC=0
Collector cut-off current
ICBO
VCB=-50V,IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-3V,IC=0
-0.1
μA
hFE
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
*
VCE=-5V, IC=-50mA
40
250
VCE(sat)(1)*
IC=-10mA,IB=-1mA
-0.25
V
VCE(sat)(2)*
IC=-50mA,IB=-5mA
-0.3
V
VBE(sat)(1)*
IC=-10mA,IB=-1mA
-1.2
V
VBE(sat)(2)*
IC=-50mA,IB=-5mA
-1.2
V
fT
Cob
VCE=10V,IC=10mA, f=20MHz
60
VCB=10V,IE=0, f=1MHz
MHz
8
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Dec,2010
www.BDTIC.com/jcst
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