Download TO-92 Plastic-Encapsulate Transistors MPSA56

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA56
TRANSISTOR (PNP)
1.EMITTER
FEATURES
z General Purpose Switching and Amplification.
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current
-0.5
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA,IC=0
-4
V
Collector cut-off current
ICBO
VCB=-80V,IE=0
-0.1
Collector cut-off current
ICEO
VCE=-60V,IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1
μA
hFE(1)
VCE=-1V, IC=-10mA
100
hFE(2)
VCE=-1V, IC=-100mA
100
VCE(sat)
IC=-100mA,IB=-10mA
-0.25
V
Base-emitter voltage
VBE
IC=-100mA, VCE=-1V
-1.2
V
Transition frequency
fT
DC current gain
Collector-emitter saturation voltage
VCE=-1V,IC=-100mA,f=100MHz
50
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μA
MHz
Typical Characterisitics
MPSA56
Static Characteristic
hFE
COMMON
EMITTER
Ta=25℃
IB=-800uA
IB=-640uA
IB= -560uA
-80
VCE=-1V
Ta=100 ℃
hFE
IB= -720uA
IC
——
500
IB=-480uA
IB=-400uA
-60
IB= -320uA
-40
Ta=25 ℃
DC CURRENT GAIN
(mA)
-100
COLLECTOR CURRENT
-120
IC
-140
IB=-240uA
100
IB=-160uA
-20
IB= -80uA
-0
-0.0
10
-0.5
-1.0
-1.5
-2.0
-2.5
COLLECTOR-EMITTER VOLTAGE
VBEsat
-2000
VCE
-3.0
-3.5
-1
VCEsat
IC
——
-10
-500
-100
COLLECTOR CURRENT
(V)
——
IC
(mA)
IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
BDTIC
-1000
Ta=25℃
Ta=100℃
-100
Ta=100℃
Ta=25℃
β=10
β=10
-100
-1
-10
COLLECTOR CURRENT
IC
COLLECTOR CURRENT
—— VBE
(mA)
——
IC
(mA)
IC
fT
T =2
5℃
a
TRANSITION FREQUENCY
100
T =1
00 ℃
a
-10
-300
-600
-900
BASE-EMMITER VOLTAGE
1000
Cob/ Cib
——
VBE
10
VCE= -1V
Ta=25 ℃
VCE=-1V
1
-1200
-10
-3
(mV)
VCB/ VEB
PC
700
Cib
C
100
-100
COLLECTOR CURRENT
COLLECTOR POWER DISSIPATION
PC (mW)
IC
COLLCETOR CURRENT
fT
1000
-500
-100
-100
-0
(pF)
-10
(mA)
-1
CAPACITANCE
-1
(MHz)
-500
IC
-10
-500
-100
Cob
10
f=1MHz
IE=0/IC=0
——
IC
(mA)
Ta
600
500
400
300
200
100
Ta=25 ℃
1
-0.1
-1
0
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REVERSE VOLTAGE
-10
V
(V)
-20
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
(℃ )
150