Download TO-92 Plastic-Encapsulate Transistors MPSA43

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA43
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z Low Current
z High Voltage
2.BASE
3.COLLECTOR
APPLICATIONS
z Video
z Telephony
z Professional Communication Equipment
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
0.2
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Test
V(BR)CBO
*
conditions
Min
Typ
Max
Unit
IC= 0.1mA,IE=0
200
V
IC=1mA,IB=0
200
V
6
V
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
Collector cut-off current
ICBO
VCB=160V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
μA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
hFE(1)
*
VCE=10V, IC=1mA
25
hFE(2)
*
VCE=10V, IC=10mA
40
hFE(3)
*
VCE=10V, IC=30mA
50
VCE(sat)(1)
*
VBE (sat)
fT
Cob
*
IC=20mA,IB=2mA
0.4
IC=20mA, IB=2mA
VCE=20V,IC=10mA,f=100MHz
200
0.9
50
VCB=20V,IE=0, f=1MHz
V
V
MHz
4
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
B,Feb,2013
www.BDTIC.com/jcst