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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA44
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z High Breakdown Voltage
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
0.3
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Test
V(BR)CBO
*
conditions
IC=1mA,IB=0
400
V
6
V
V(BR)EBO
IE=0.1mA,IC=0
ICBO
VCB=400V,IE=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Unit
V
Emitter-base breakdown voltage
VEB=4V,IC=0
IEBO
Max
400
V(BR)CEO
Emitter cut-off current
Typ
IC= 0.1mA,IE=0
Collector-emitter breakdown voltage
Collector cut-off current
Min
hFE(1) *
VCE=10V, IC=1mA
40
hFE(2) *
VCE=10V, IC=10mA
50
hFE(3)
*
VCE=10V, IC=50mA
45
hFE(4)
*
VCE=10V, IC=100mA
40
0.1
μA
0.1
μA
200
VCE(sat)(1)
*
IC=1mA,IB=0.1mA
0.4
VCE(sat)(2)
*
IC=10mA,IB=1mA
0.5
VCE(sat)(3)
*
IC=50mA,IB=5mA
0.75
IC=10mA, IB=1mA
0.75
V
*
VBE (sat)
V
Collector output capacitance
Cob
VCB=20V,IE=0, f=1MHz
7
pF
Emitter input capacitance
Cib
VEB=0.5V,IC=0, f=1MHz
130
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
B,Jun,2013
www.BDTIC.com/jcst
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