Download TO-92 Plastic-Encapsulate Transistors MPS651

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPS651
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z General Purpose Amplifier
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter
breakdown
Emitter-base breakdown voltage
Test
V(BR)CBO
V(BR)CEO
*
V(BR)EBO
conditions
Min
Typ
Max
Unit
IC= 0.1mA,IE=0
80
V
IC=10mA,IB=0
60
V
IE=0.01mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=80V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
μA
hFE(1)*
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE=2V, IC=50mA
75
hFE(2)
*
VCE=2V, IC=500mA
75
hFE(3)
*
VCE=2V, IC=1A
75
hFE(4)
*
VCE=2V, IC=2A
40
VCE(sat) (1)
*
IC=2A,IB=200mA
0.5
V
VCE(sat) (2)
*
IC=1A,IB=100mA
0.3
V
IC=1A,IB=100mA
1.2
V
1
V
VBE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
*
*
IC=1A, VCE=2V
VCE=5V,IC=50mA,f=100MHz
75
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
www.BDTIC.com/jcst
MHz
Typical Characteristics
Static Characteristic
(A)
4.95mA
IC
4.4mA
DC CURRENT GAIN
COLLECTOR CURRENT
o
Ta=100 C
COMMON
EMITTER
Ta=25℃
5.5mA
1.0
hFE —— IC
300
hFE
1.5
MPS651
3.85mA
3.3mA
2.75mA
2.2mA
0.5
1.65mA
250
200
o
Ta=25 C
150
1.1mA
VCE= 2V
IB=0.55mA
0.0
100
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
8
VCE
1
VBEsat —— IC
1000
10
100
COLLECTOR CURRENT
(V)
VCEsat ——
200
IC
1000
(mA)
2000
IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
BDTIC
800
Ta=25℃
600
Ta=100℃
400
β=10
150
100
Ta=100℃
50
Ta=25℃
β=10
200
0.1
0
1
10
100
COLLECTOR CURRENT
IC ——
2000
IC
1000 2000
1
10
(mA)
100
COLLECTOR CURRENT
VBE
Cob / Cib
1000
——
1000
IC
VCB / VEB
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
IC (mA)
50
Cib
1000
CAPACITANCE
COLLECTOR CURRENT
C
1500
o
Ta=100 C
Ta=25℃
2000
(mA)
100
Cob
500
VCE=2V
0
0
200
400
600
BASE-EMITTER VOLTAGE
fT
——
10
0.1
1000
1
IC
Pc
750
(MHz)
fT
100
TRANSITION FREQUENCY
10
REVERSE VOLTAGE
VBE(mV)
COLLECTOR POWER DISSIPATION
Pc (mW)
300
800
——
V
20
(V)
Ta
625
500
375
250
125
VCE=5V
o
Ta=25 C
10
0
0
20
www.BDTIC.com/jcst
40
COLLECTOR CURRENT
60
IC
(mA)
80
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
Related documents