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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 MPS751 TRANSISTOR (PNP) 1. EMITTER FEATURES Switching and Amplifier Applications 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit BDTIC VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A 0.625 W PC RθJA TJ Tstg Collector Dissipation Thermal Resistance Irom Junction 200 ℃/W Wo Ambient Junction Temperature 150 ℃ Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol conditions Min Typ Max Unit IC=-100μA,IE=0 -80 V IC=-10mA,IB=0 -60 V V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-80V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage DC current gain * hFE(1) * VCE=-2V,IC=-50mA 75 hFE(2) * VCE=-2V,IC=-500mA 75 hFE(3) * VCE=-2V,IC=-1A 75 hFE(4) * VCE=-2V,IC=-2A 40 IC=-2A,IB=-200mA -0.5 IC=-1A,IB=-100mA -0.3 * IC=-1A,IB=-100mA -1.2 V * VCE=-2V,IC=-1A -1 V Collector-emitter saturation voltage VCE(sat) * Base -emitter saturation voltage VBE(sat) VBE(on) Base -emitter on voltage fT Transition frequency * Test VCE=-5V,IC=-50mA,f=100MHz Pulse Test: Pulse Width<= 300us, Duty Cycle = 2.0%. www.BDTIC.com/jcst 75 V MHz