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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
MPS751
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Switching and Amplifier Applications
2.
BASE
3.
COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-2
A
0.625
W
PC
RθJA
TJ
Tstg
Collector Dissipation
Thermal Resistance Irom Junction 200
℃/W
Wo Ambient
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
conditions
Min
Typ
Max
Unit
IC=-100μA,IE=0
-80
V
IC=-10mA,IB=0
-60
V
V(BR)EBO
IE=-10μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-80V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1
μA
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
DC current gain
*
hFE(1)
*
VCE=-2V,IC=-50mA
75
hFE(2)
*
VCE=-2V,IC=-500mA
75
hFE(3)
*
VCE=-2V,IC=-1A
75
hFE(4) *
VCE=-2V,IC=-2A
40
IC=-2A,IB=-200mA
-0.5
IC=-1A,IB=-100mA
-0.3
*
IC=-1A,IB=-100mA
-1.2
V
*
VCE=-2V,IC=-1A
-1
V
Collector-emitter saturation voltage
VCE(sat)
*
Base -emitter saturation voltage
VBE(sat)
VBE(on)
Base -emitter on voltage
fT
Transition frequency
*
Test
VCE=-5V,IC=-50mA,f=100MHz
Pulse Test: Pulse Width<= 300us, Duty Cycle = 2.0%.
www.BDTIC.com/jcst
75
V
MHz
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