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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA05
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z General Purpose Amplifier
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
0.5
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
4
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=60V,IB=0
0.1
μA
1
μA
0.25
V
IEBO
VEB=3V,IC=0
hFE(1)
VCE=1.0V, IC=100mA
100
hFE(2)
VCE=1.0V, IC=10mA
100
VCE(sat)
IC=100mA,IB=10mA
Base-emitter voltage
VBE
IC=100mA, VCE=1.0V
Transition frequency
fT
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
VCE=2.0V,IC=10mA,f=100MHz
V
1.2
100
V
MHz
A,Dec,2010
www.BDTIC.com/jcst
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