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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPS3702
TRANSISTOR (PNP)
1.EMITTER
FEATURES
z General Purpose Amplifier Transistor
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.8
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-3V,IC=0
-0.1
μA
hFE
DC current gain
Collector-emitter saturation voltage
VCE(sat)
VBE
Base-emitter voltage
Current gain-bandwidth product
Collector output capacitance
*
*
fT
Cob
VCE=-5V, IC=-50mA
*
60
IC=-50mA,IB=-5mA
IC=-50mA, VCE=-5V
-0.6
VCE=-5V,IC=-50mA,f=20MHz
100
VCB=-10V,IE=0, f=1MHz
V
300
-0.25
V
-1.0
V
MHz
12
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Dec,2010
www.BDTIC.com/jcst
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