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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTH10
TRANSISTOR (NPN)
SOT–23
FEATURES
 VHF/UHF Transistor
MARKING: 3EM
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
2. EMITTER
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current
50
mA
PC
Collector Power Dissipation
225
mW
Thermal Resistance From Junction To Ambient
556
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
3. COLLECTOR
BDTIC
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
3
V
Collector cut-off current
ICBO
VCB=25V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=2V, IC=0
0.1
µA
DC current gain
hFE
VCE=10V, IC=4mA
VCE(sat)
IC=4mA, IB=0.4mA
0.5
V
Base-emitter voltage
VBE
VCE=10V, IC=4mA
0.95
V
Transition frequency
fT
Collector-emitter saturation voltage
Collector output capacitance
Cob
VCE=10V,IC=4mA
f=100MHz
60
650
VCB=10V, IE=0, f=1MHz
www.BDTIC.com/jcst
MHz
0.7
pF
Typical Characterisitics
MMBTH10
hFE
Static Characteristic
1000
10
45uA
hFE
40uA
DC CURRENT GAIN
(mA)
IC
50uA
6
COLLECTOR CURRENT
IC
COMMON EMITTER
VCE=10V
COMMON
EMITTER
Ta=25℃
8
——
35uA
30uA
4
25uA
20uA
Ta=100℃
Ta=25℃
100
15uA
2
10uA
IB=5uA
0
10
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCEsat
1
——
10
VCE
12
1
10
(V)
50
COLLECTOR CURRENT
IC
VBEsat
1.0
IC
——
(mA)
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=10
0.1
Ta=100℃
Ta=25℃
0.01
0.1
1
10
COLLECTOR CURRENT
IC
——
IC
0.8
Ta=25℃
Ta=100℃
0.6
0.4
0.1
50
1
(mA)
10
COLLECTOR CURRENT
Cob/ Cib
VBE
——
f=1MHz
IE=0/IC=0
Ta=25℃
Ta=100℃
(pF)
10
Cib
C
CAPACITANCE
COLLECTOR CURRENT
IC
(mA)
COMMON EMITTER
VCE=10V
Ta=25℃
1
0.1
0.2
0.4
0.6
0.8
1
Cob
0.1
0.1
1.0
IC
PC
270
900
fT
(MHz)
——
REVERSE VOLTAGE
COLLECTOR POWER DISSIPATION
PC (mW)
fT
1200
3
1
0.3
BASE-EMMITER VOLTAGE VBE (V)
TRANSITION FREQUENCY
50
(mA)
VCB/ VEB
10
50
IC
600
300
COMMON EMITTER
VCE=10V
——
V
10
20
(V)
Ta
225
180
135
90
45
Ta=25℃
0
1
0
www.BDTIC.com/jcst
3
COLLECTOR CURRENT
10
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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