Download SOT-23 Plastic-Encapsulate Transistors MMBTA92

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA92
SOT-23
TRANSISTOR (PNP)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
High voltage transistor
MARKING:2D
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Value
Unit
VCBO
Symbol
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-200
mA
Collector Current -Pulsed
-500
mA
Collector Power Dissipation
300
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
417
℃/W
ICM
PC
Tj
Tstg
Parameter
Thermal Resistance from Junction to Ambient
RӨJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, IE=0
-300
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-200V, IE=0
-0.25
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
hFE(1)
VCE= -10V, IC= -1mA
60
hFE(2)
VCE= -10V, IC=-10mA
100
hFE(3)
VCE= -10V, IC=-30mA
60
DC current gain
200
Collector-emitter saturation voltage
VCE(sat)
IC=-20mA, IB= -2mA
-0.2
Base-emitter saturation voltage
VBE(sat)
IC= -20mA, IB= -2mA
-0.9
Transition frequency
fT
VCE=-20V, IC= -10mA
f=30MHz
www.BDTIC.com/jcst
50
V
V
MHz
MMBTA92
Typical Characteristics
IC
70
(mA)
IC
hFE
-350uA
DC CURRENT GAIN
IC
——
COMMON
EMITTER
Ta=25℃
-400uA
50
hFE
1000
-450uA
60
COLLECTOR CURRENT
VCE
——
-500uA
-300uA
40
-250uA
-200uA
30
-150uA
20
Ta=100℃
Ta=25℃
100
-100uA
10
IB=-50uA
COMMON EMITTER
VCE= -10V
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
20
10
-0.1
24
-10
-100
COLLECTOR CURRENT
IC
-500
-1
VCE (V)
VBEsat ——
-900
IC
-300
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
Ta=100 ℃
-100
Ta=25℃
Ta=25℃
-600
Ta=100 ℃
β=10
β=10
-50
-10
-0.1
-1
-10
COLLECTOR CURREMT
IC
-100
——
IC
-1
-10
COLLECTOR CURREMT
(mA)
fT
VBE
(mA)
IC
——
(MHz)
fT
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
-10
-1
100
COMMON EMITTER
VCE=-20V
COMMON EMITTER
VCE= -10V
Ta=25℃
-0.1
-0
-300
-600
-900
10
-0.1
-1200
-1
100
Cob/Cib
——
VCB/VEB
(pF)
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
C
10
1
-0.1
Cob
-1
PC
350
f=1MHz
IE=0/IC=0
Cib
-10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
CAPACITANCE
-100
IC
300
(mA)
IC
COLLECTOR CURRENT
-300
-0.1
-50
-10
V
(V)
-20
-100
(mA)
Ta
300
250
200
150
100
50
0
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REVERSE VOLTAGE
——
IC
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150