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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA44
TRANSISTOR (NPN)
SOT–23
FEATURES
 High Collector-Emitter Voltage
 Complement to MMBTA94
MARKING: 3D
1. BASE
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
Collector Current-Continuous
200
mA
Collector Current -Pulsed
300
mA
Collector Power Dissipation
350
mW
Thermal Resistance From Junction To Ambient
357
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
3. COLLECTOR
BDTIC
IC
IC0
PC
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA, IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=400V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.1
µA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE(1) *
VCE=10V, IC=1mA
40
hFE(2) *
VCE=10V, IC=10mA
50
hFE(3) *
VCE=10V, IC=50mA
45
hFE(4) *
VCE=10V, IC=100mA
40
200
VCE(sat)1*
IC=1mA, IB=0.1mA
0.4
V
VCE(sat)2*
IC=10mA, IB=1mA
0.5
V
VCE(sat)3*
IC=50mA, IB=5mA
0.75
V
VBE(sat)*
IC=10mA, IB=1mA
0.75
V
Collector output capacitance
Cob
VCB=20V, IE=0, f=1MHz
7
pF
Emitter input capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
130
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
16
hFE
DC CURRENT GAIN
(mA)
64uA
IC
COLLECTOR CURRENT
VCE= 10V
COMMON
EMITTER
Ta=25℃
72uA
12
hFE —— IC
1000
80uA
14
MMBTA44
56uA
10
48uA
8
40uA
6
32uA
Ta=100℃
Ta=25℃
100
24uA
4
16uA
2
IB=8uA
0
0
5
10
15
COLLECTOR-EMITTER VOLTAGE
VCE
10
0.1
20
VCEsat ——
VBEsat —— IC
1.0
1
COLLECTOR CURRENT
(V)
10
IC
100
(mA)
IC
300
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
0.8
Ta=25℃
0.6
Ta=100℃
0.4
β=10
100
Ta=100℃
Ta=25℃
30
0.2
0.0
0.1
10
1
10
COLLECTOR CURRENT
Cob / Cib
——
500
IC
100
VCB / VEB
COLLECTOR POWER DISSIPATION
Pc (mW)
(pF)
C
CAPACITANCE
Pc
400
Ta=25℃
Cib
Cob
10
10
100
COLLECTOR CURRENT
f=1MHz
IE=0 / IC=0
100
1
(mA)
——
IC
(mA)
Ta
350
300
250
200
150
100
50
1
0.1
0
1
10
REVERSE VOLTAGE
V
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
Ta
125
(℃ )
150
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