Download SOT-23 Plastic-Encapsulate Transistors MMBTA42

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA42
TRANSISTOR (NPN)
SOT-23
FEATURES
z High breakdown voltage
z Low collector-emitter saturation voltage
z Complementary to MMBTA92 (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
Marking: 1D
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.3
A
Collector Current-Peak
0.5
A
Collector Power dissipation
0.35
W
RӨJA
Thermal Resistance, junction to Ambient
357
℃/W
TJ
Junction Temperature
150
℃
Storage Temperature
-55~+150
℃
ICM
PC
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA,IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA, IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=200V, IE=0
0.25
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE= 10V, IC= 1mA
60
hFE(2)
VCE= 10V, IC=10mA
100
hFE(3)
VCE=10V, IC=30mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=20mA, IB= 2mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC= 20mA, IB=2mA
0.9
V
DC current gain
Transition frequency
fT
VCE= 20V, IC= 10mA,
f=30MHz
www.BDTIC.com/jcst
50
200
MHz
Typical Characteristics
IC
18
VCE
——
——
IC
COMMON
EMITTER
Ta=25℃
hFE
80uA
70uA
DC CURRENT GAIN
(mA)
IC
12
COLLECTOR CURRENT
14
hFE
1000
90uA
16
MMBTA42
60uA
50uA
10
40uA
8
30uA
6
Ta=100℃
Ta=25℃
100
20uA
4
IB=10uA
COMMON EMITTER
VCE=10V
2
10
0.1
0
0
2
4
6
8
10
12
14
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
500
——
18
20
22
1
VCE (V)
10
COLLECTOR CURRENT
IC
VBEsat ——
900
100
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
Ta=100 ℃
100
Ta=25℃
Ta=25℃
600
Ta=100 ℃
β=10
β=10
10
0.1
1
10
COLLECTOR CURREMT
IC
100
——
IC
1
fT
VBE
——
IC
100
(mA)
IC
(MHz)
300
fT
1
300
600
900
COMMON EMITTER
VCE=20V
Ta=25℃
0.1
0
100
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
10
COMMON EMITTER
VCE=10V
10
0.1
1200
1
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
(pF)
C
10
Cob
1
0.1
1
PC
400
f=1MHz
IE=0/IC=0
Cib
10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
CAPACITANCE
10
COLLECTOR CURREMT
(mA)
(mA)
IC
COLLECTOR CURRENT
300
0.1
100
10
V
(V)
20
100
(mA)
Ta
300
200
100
0
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REVERSE VOLTAGE
——
IC
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150