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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA06
TRANSISTOR (NPN)
SOT–23
FEATURES
 For Switching and Amplifier Applications
 Complementary Type PNP Transistor MMBTA56
MARKING: 1GM
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
2. EMITTER
Value
Unit
80
V
3. COLLECTOR
BDTIC
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
416
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=0.1mA, IE=0
80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA, IC=0
4
V
Collector cut-off current
ICBO
VCB=80V, IE=0
0.1
µA
Collector cut-off current
ICES
VCE=60V, IB=0
0.1
µA
Emitter cut-off current
IEBO
VEB=3V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC=10mA
100
hFE(2)
VCE=1V, IC=100mA
100
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1.2
V
Transition frequency
fT
VCE=2V,IC=10mA, f=100MHz
100
MHz
A,Oct,2010
www.BDTIC.com/jcst
MMBTA06
Typical Characterisitics
Static Characteristic
90
o
Ta=100 C
hFE
450uA
70
VCE=1V
COMMON
EMITTER
Ta=25℃
500uA
400uA
60
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
80
hFE —— IC
500
350uA
50
300uA
40
250uA
200uA
30
150uA
20
o
Ta=25 C
100
100uA
10
IB=50uA
0
0
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE
8
VCE
9
20
10
1
VCEsat —— IC
1
10
100
COLLECTOR CURRENT
(V)
VBEsat ——
10
IC
500
(mA)
IC
BDTIC
β=10
0.1
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=10
Ta=100℃
Ta=25℃
0.01
Ta=25℃
1
Ta=100℃
0.1
1
10
COLLECTOR CURRENT
IC
VBE ——
100
500
100
1
10
(mA)
IC
Cob / Cib
1000
500
100
COLLECTOR CURRENT
——
IC
(mA)
VCB / VEB
IC (mA)
f=1MHz
IE=0 / IC=0
o
(pF)
0.1
0.0
10
Cib
Cob
VCE=1V
0.3
0.6
0.9
BASE-EMITTER VOLTAGE
fT
——
1
0.1
1.2
1
IC
Pc
0.4
COLLECTOR POWER DISSIPATION
Pc (W)
100
TRANSITION FREQUENCY
10
REVERSE VOLTAGE
VBE(V)
(MHz)
300
C
1
100
CAPACITANCE
T=
a 25
℃
T=
a 10
0 oC
COLLECTOR CURRENT
10
fT
Ta=25 C
——
V
(V)
Ta
0.3
0.2
0.1
VCE=2V
o
Ta=25 C
10
3
10
0.0
www.BDTIC.com/jcst
COLLECTOR CURRENT
70
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
(℃ )
150
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