Download SOT-23 Plastic-Encapsulate Transistors MMBT5401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT5401
TRANSISTOR (PNP)
SOT–23
FEATURES
 Complementary to MMBT5551
 Ideal for Medium Power Amplification and Switching
1. BASE
MARKING: 2L
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
3. COLLECTOR
BDTIC
IC
Collector Current
-0.6
A
PC
Collector Power Dissipation
0.3
W
Thermal Resistance from Junction to Ambient
416
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
hFE(1)
*
hFE(2) *
DC current gain
hFE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
*
Test
conditions
Min
Typ
Max
Unit
IC=-100µA, IE=0
-160
V
IC=-1mA, IB=0
-150
V
IE=-10µA, IC=0
-5
V
VCB=-120V, IE=0
-0.1
μA
VEB=-4V, IC=0
-0.1
μA
VCE=-5V, IC=-1mA
80
VCE=-5V, IC=-10mA
100
VCE=-5V, IC=-50mA
50
300
VCE(sat)1
*
IC=-10mA, IB=-1mA
-0.2
V
VCE(sat)2
*
IC=-50mA, IB=-5mA
-0.5
V
VBE(sat)1
*
IC=-10mA, IB=-1mA
-1
V
VBE(sat)2
*
IC=-50mA, IB=-5mA
-1
V
fT
Transition frequency
VCE=-5V,IC=-10mA, f=30MHz
100
MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE (2)
RANK
L
H
RANGE
100-200
200-300
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
-20
VCE=-5V
COMMON
EMITTER
Ta=25℃
-90uA
o
hFE
-70uA
200
-12
-60uA
-10
-50uA
-8
-40uA
-6
Ta=100 C
250
-80uA
DC CURRENT GAIN
(mA)
IC
-14
COLLECTOR CURRENT
-16
hFE —— IC
300
-100uA
-18
MMBT5401
150
o
Ta=25 C
100
-30uA
-4
50
-20uA
-2
IB=-10uA
-0
-0
-3
0
-6
-9
COLLECTOR-EMITTER VOLTAGE
VCE
-1
VBEsat —— IC
-1.0
-10
VCEsat ——
-1
-600
-100
COLLECTOR CURRENT
(V)
IC
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
Ta=25℃
-0.8
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
-0.6
Ta=100℃
-0.4
-0.2
-0.0
-0.1
-1
-10
COLLECTOR CURRENT
IC
-0.1
Ta=25℃
-0.01
-0.1
-600
-100
Ta=100℃
-10
Cob / Cib
100
(mA)
IC
—— VCB / VEB
VCE=-5V
o
(pF)
o
Ta=100 C
Ta=25℃
-1
-0.2
-0.4
-0.6
-0.8
BASE-EMITTER VOLTAGE
fT
10
Cob
1
-0.5
-1.0
-1
-10
REVERSE VOLTAGE
VBE(V)
—— IC
Pc
0.4
COLLECTOR POWER DISSIPATION
Pc (W)
300
250
fT
(MHz)
Cib
C
-10
CAPACITANCE
COLLECTOR CURRENT
IC (mA)
f=1MHz
IE=0 / IC=0
Ta=25 C
-0.1
-0.0
TRANSITION FREQUENCY
-600
-100
COLLECTOR CURRENT
IC —— V
BE
-100
-1
(mA)
200
150
100
50
——
V
(V)
Ta
0.3
0.2
0.1
VCE=-5V
o
Ta=25 C
0
0.0
-0
-5
-10
www.BDTIC.com/jcst
-15
COLLECTOR CURRENT
-20
IC
-25
(mA)
-30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150