Download SOT-23 Plastic-Encapsulate Transistors MMBT3906

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT3906
TRANSISTOR (PNP)
SOT–23
FEATURES
z
As complementary type, the NPN transistor
z
MMBT3904 is Recommended
Epitaxial planar die construction
1. BASE
MARKING: 2A
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
BDTIC
Value
Units
VCBO
Symbol
Collector-Base Voltage
Parameter
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Dissipation
0.2
W
RθJA
Thermal resistance junction to ambient
625
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,
IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA,
IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40 V, IE=0
-100
nA
Collector cut-off current
ICEX
VCE=-30V, VBE(off)=-3V
-50
nA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-100
nA
hFE1
VCE=-1V, IC= -10mA
100
hFE2
VCE= -1V, IC=-50mA
60
hFE3
VCE= -1V, IC=-100mA
30
DC current gain
Collector-emitter saturation voltage
VCE(sat)1
IC=-50mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat)
IC= -50mA, IB=-5mA
300
-0.3
-0.95
300
V
V
Transition frequency
fT
VCE=-20V,IC=-10mA,f=100MHz
Delay Time
td
35
nS
Rise Time
tr
VCC=-3V,VBE=-0.5V
IC=-10mA, IB1=IB2=-1mA
35
nS
Storage Time
ts
225
nS
Fall Time
tf
VCC=-3V,IC=-10mA
IB1=IB2=-1mA
75
nS
CLASSIFICATION OF hFE(1)
HFE
100-300
RANK
L
H
RANGE
100–200
200–300
www.BDTIC.com/jcst
MHz
Typical Characterisitics
Static Characteristic
-80
hFE
200
DC CURRENT GAIN
COLLECTOR CURRENT
IC
Ta=100℃
-350uA
-300uA
-250uA
-200uA
-40
——
COMMON EMITTER
VCE=-1V
COMMON
EMITTER
Ta=25℃
-400uA
-60
hFE
300
-500uA
-450uA
IC
(mA)
-100
MMBT3906
-150uA
Ta=25℃
100
-100uA
-20
IB=-50uA
0
-0.1
-0
-0
-4
-8
-12
-16
COLLECTOR-EMITTER VOLTAGE
VCEsat
-500
——
VCE
-20
-1
-0.3
-10
-3
COLLECTOR CURRENT
(V)
IC
VBEsat
-1.2
-100
-30
IC
-200
(mA)
IC
——
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-300
Ta=100℃
-100
Ta=25℃
-30
Ta=25℃
-0.8
Ta=100℃
-0.4
β=10
-10
β=10
-0.0
-1
-3
-30
-10
COLLECTOR CURRENT
IC
-100
IC
-100
-200
-1
-10
-3
(mA)
-100
-30
COLLECTOR CURRENT
—— VBE
Cob/ Cib
9
——
IC
VCB/ VEB
f=1MHz
IE=0/IC=0
-30
Ta=25℃
Cob
(pF)
Ta=100℃
Cib
C
-10
CAPACITANCE
IC
(mA)
COMMON EMITTER
VCE=-1V
COLLECTOR CURRENT
-200
(mA)
-3
Ta=25℃
-1
3
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-1.2
fT
600
—— IC
-1
-3
REVERSE VOLTAGE
V
-0.3
BASE-EMMITER VOLTAGE VBE (V)
PC
250
——
-10
-20
(V)
Ta
VCE=-20V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
400
200
200
150
100
50
0
-1
-3
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-10
COLLECTOR CURRENT
-30
IC
(mA)
-50
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150